TT8K1 Datasheet 20V Nch + Nch Middle Power MOSFET llOutline TSST8 V 20V DSS R (Max.) 72m DS(on) I 2.5A D P 1.25W D llFeatures llInner circuit 1) Low on - resistance. 2) High power package. 3) 1.5V drive llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking K01 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 20 V DSS Continuous drain current I 2.5 A D *1 I Pulsed drain current 10 A D,pulse V Gate - Source voltage 10 V GSS total 1.25 *2 P D Power dissipation element 1.0 W *3 P total 0.6 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 TT8K1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 100 *2 R thJA Thermal resistance, junction - ambient element - - 125 /W *3 R total - - 208 thJA llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 10V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 0.3 - 1.0 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2.5A - 52 72 GS D V = 2.5V, I = 2.5A - 65 90 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.8V, I = 1.2A - 85 120 GS D V = 1.5V, I = 0.5A - 100 140 GS D Forward Transfer *4 Y V = 10V, I = 2.5A 2.7 - - S fs DS D Admittance www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.001