DMN3065LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features I Low On-Resistance D max V R Package (BR)DSS DS(ON) T = +25C A Low Gate Threshold Voltage 52m V = 10V GS Low Input Capacitance 30V 65m V = 4.5V SOT323 4A GS Fast Switching Speed 85m V = 2.5V GS Low Input/Output Leakage Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications Case: SOT323 DC-DC Converters Case Material: Molded Plastic, Green Molding Compound. UL Power Management Functions Flammability Classification Rating 94V-0 Battery Operated Systems and Solid-State Relays Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.006 grams (approximate) SOT323 D D G GS S Top View Pin Configuration Equivalent CircuitI Top View Ordering Information (Note 4) Part Number Case Packaging DMN3065LW-7 SOT323 3000/Tape & Reel DMN3065LW-13 SOT323 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3065LW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain Source Voltage 30 V V DSS Gate-Source Voltage 12 V V GSS Drain Current (Note 5) I 4 A D Body-Diode Continuous Current (Note 5) I 1 A S Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 770 mW D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 162 C/W A JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Body Leakage I 100 nA V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 0.5 1.5 V V = V , I = 250A GS(th) DS GS D V = 10V, I = 4A 52 GS D Static Drain-Source On-Resistance m R 65 V = 4.5V, I = 3A DS (ON) GS D 85 V = 2.5V, I = 2A GS D Source-Drain Diode Forward Voltage V 1.2 V V = 0V, I = 2.0A SD GS S DYNAMIC CHARACTERISTICS(7) Input Capacitance Ciss 465 pF VDS = 15V, VGS = 0V, f = Output Capacitance Coss 49.5 pF 1.0MHz Reverse Transfer Capacitance Crss 43.8 pF Gate Resistance R 2.3 V =0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V =10V) Q 11.7 nC V = 15V, I = 4 A GS g DS D Total Gate Charge (V =4.5V) Q 5.5 nC GS g Gate-Source Charge Q 1.1 nC V = 15V, I = 4 A gs DS D Gate-Drain Charge Q 1.8 nC gd Turn-On Delay Time 1.9 ns t D(on) Turn-On Rise Time 1.6 ns t = 15V, V = 10V, r V DD GEN Turn-Off Delay Time 10.3 ns R =3 , R = 3.75 t GEN L D(off) Turn-Off Fall Time 2.0 ns t f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 2 of 5 April 2014 DMN3065LW Diodes Incorporated www.diodes.com Document number: DS36078 Rev. 5 - 2