X-On Electronics has gained recognition as a prominent supplier of TT8J21TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. TT8J21TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TT8J21TR ROHM

Hot TT8J21TR electronic component of ROHM
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See Product Specifications
Part No.TT8J21TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET P Chan-20V-2.5A Mid-PowerSwitching
Datasheet: TT8J21TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
307: USD 0.3321 ea
Line Total: USD 101.95 
Availability - 2910
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ: 307  Multiples: 1
Pack Size: 1
Availability Price Quantity
1385
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 1.111
10 : USD 0.7788
100 : USD 0.528
500 : USD 0.4378
1000 : USD 0.3971
3000 : USD 0.3498
6000 : USD 0.3443
9000 : USD 0.3355
24000 : USD 0.3344

2910
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 307
Multiples : 1
307 : USD 0.3321
500 : USD 0.3202
1000 : USD 0.3096
2500 : USD 0.3006

2735
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 30
Multiples : 1
30 : USD 1.3747
50 : USD 1.066
100 : USD 0.7394
200 : USD 0.7377
500 : USD 0.5915
1000 : USD 0.5427

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Series
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Typical Turn-Off Delay Time
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We are delighted to provide the TT8J21TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TT8J21TR and other electronic components in the MOSFETs category and beyond.

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TT8J21 Datasheet -20V Pch + Pch Middle Power MOSFET llOutline TSST8 V -20V DSS R (Max.) 68m DS(on) I 2.5A D P 1.25W D llFeatures llInner circuit 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSST8). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking J21 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -20 V DSS Continuous drain current I 2.5 A D *1 I Pulsed drain current 10 A D,pulse V Gate - Source voltage 10 V GSS total 1.25 *2 P D Power dissipation element 1.0 W *3 P total 0.6 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 TT8J21 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 100 *2 R thJA Thermal resistance, junction - ambient element - - 125 /W *3 R total - - 208 thJA llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 10V - - 10 A GSS DS GS leakage current Gate threshold V V = -10V, I = -1mA -0.3 - -1.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -2.5A - 49 68 GS D V = -2.5V, I = -1.2A - 68 95 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -1.2A - 100 150 GS D V = -1.5V, I = -0.5A - 140 280 GS D R Gate input resistance f = 1MHz, open drain - 12 - G Forward Transfer *4 Y V = -10V, I = -2.5A 2.5 - - S fs DS D Admittance www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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