X-On Electronics has gained recognition as a prominent supplier of TT8J2TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. TT8J2TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TT8J2TR ROHM

TT8J2TR electronic component of ROHM
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See Product Specifications
Part No.TT8J2TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET SW MOSFET MIDDLE PWR P CH -30V-2.5A
Datasheet: TT8J2TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9944 ea
Line Total: USD 0.99 
Availability - 1443
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1443
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.9944
10 : USD 0.7821
100 : USD 0.5357
500 : USD 0.4444
1000 : USD 0.4026
3000 : USD 0.3553
6000 : USD 0.341
24000 : USD 0.3322

298
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 305
Multiples : 1
305 : USD 0.7172

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TT8J2TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TT8J2TR and other electronic components in the MOSFETs category and beyond.

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TT8J2 Datasheet -30V Pch + Pch Middle Power MOSFET llOutline TSST8 V -30V DSS R (Max.) 84m DS(on) I 2.5A D P 1.25W D llFeatures llInner circuit 1) Low on - resistance. 2) High power package. 3) Low voltage drive(4V). 4) Built-in G-S Protection Diode. 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking J02 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS Continuous drain current I 2.5 A D *1 I Pulsed drain current 10 A D,pulse V Gate - Source voltage 20 V GSS total 1.25 *2 P D Power dissipation element 1.0 W *3 P total 0.6 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 TT8J2 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 100 *2 R thJA Thermal resistance, junction - ambient element - - 125 /W *3 R total - - 208 thJA llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -2.5A - 60 84 GS D Static drain - source *4 R V = -4.5V, I = -1.2A - 95 130 m DS(on) GS D on - state resistance V = -4V, I = -1.2A - 115 160 GS D Forward Transfer *4 Y V = -10V, I = -2.5A 1.8 - - S fs DS D Admittance www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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