X-On Electronics has gained recognition as a prominent supplier of BSC020N03MS G MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSC020N03MS G MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSC020N03MS G Infineon

Name: BSC020N03MS G
Brand: Infineon
SKU: BSC020N03MSG_Infineon
Availability: InStock
Rating: 5 (11 reviews)

BSC020N03MS G electronic component of Infineon

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See Product Specifications

Part No.	BSC020N03MS G
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET OptiMOS 3 M-Series PWR-MOSFET 30V 100A
Datasheet:	BSC020N03MS G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.55 ea
Line Total: USD 1.55

Availability - 502
Ship by Tue. 11 Mar to Thu. 13 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

BSC020N03MS G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

502

Ship by Tue. 11 Mar to Thu. 13 Mar

MOQ : 1
Multiples : 1

1 : USD 1.55
10 : USD 1.1496
100 : USD 0.8415
500 : USD 0.7337
1000 : USD 0.6138
2500 : USD 0.5863
5000 : USD 0.5863

Specifications

Manufacturer

Infineon Infineon

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

25 A 25 A

Vds - Drain-Source Breakdown Voltage

30 V 30 V

Rds On - Drain-Source Resistance

1.7 mOhms 1.7 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

1 V 1 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

96 W 96 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

TDSON TDSON

Packaging

Reel Reel

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Qg - Gate Charge

60 nC 60 nC

Channel Mode

Enhancement Enhancement

Tradename

Optimos Optimos

Configuration

Single Quad Drain Triple Source Single Quad Drain Triple Source

Series

Bsc020n03 Bsc020n03

Brand

Infineon Technologies Infineon Technologies

Continuous Drain Current

25 A 25 A

Drain-Source Breakdown Voltage

30 V 30 V

Gate-Source Breakdown Voltage

+/- 16 V +/- 16 V

Power Dissipation

2.5 W 2.5 W

Rds On

2 Mohms 2 Mohms

Fall Time

14 ns 14 ns

Rise Time

14 ns 14 ns

Factory Pack Quantity :

5000 5000

Typical Turn-Off Delay Time

36 ns 36 ns

Height

1.27 mm 1.27 mm

Length

5.9 mm 5.9 mm

Transistor Type

1 N - Channel 1 N - Channel

Width

5.15 mm 5.15 mm

Forward Transconductance - Min

60 S 60 S

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Typical Turn-On Delay Time

27 ns 27 ns

Notes:- Show Stocked Products With Similar Attributes.

BSC020N03MS G Alternative Parts

We are delighted to provide the BSC020N03MS G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSC020N03MS G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

BSC020N03MS G MOSFET SuperSO8 OptiMOS3 M-Series Power-MOSFET, 30 V 5 8 6 7 Features 7 6 8 5 Optimized for 5V driver application (Notebook, VGA, POL) Low FOMSW for High Frequency SMPS 100% Avalanche tested N-channel 4 Very low on-resistance R V =4.5 V 1 DS(on) GS 3 2 2 Excellent gate charge x R product (FOM) DS(on) 3 1 1) 4 Qualified according to JEDEC for target applications Superior thermal resistance Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 S1 8D S2 7D Table 1 Key Performance Parameters Parameter Value Unit S3 6D V DS 30 V G4 5D R , V =10 V 2 m DS(on),max GS R , V =4.5 V 2.5 m DS(on),max GS I 176 A D Type / Ordering Code Package Marking Related Links BSC020N03MS G PG-TDSON-8 020N03MS - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.1, 2020-08-14OptiMOS3 M-Series Power-MOSFET, 30 V BSC020N03MS G Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 12 Trademarks . 12 Disclaimer 12 Final Data Sheet 2 Rev. 2.1, 2020-08-14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
502 Ship by Tue. 11 Mar to Thu. 13 Mar MOQ : 1 Multiples : 1	1 : USD 1.55 10 : USD 1.1496 100 : USD 0.8415 500 : USD 0.7337 1000 : USD 0.6138 2500 : USD 0.5863 5000 : USD 0.5863

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