A Product Line of Diodes Incorporated DMN3024LSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance I D V R Fast switching speed (BR)DSS DS(on) T = 25C A Green component and RoHS compliant (Note 1) 24m V = 10V 8.5A GS 30V 36m V = 4.5V 6.9A GS Mechanical Data Case: SO-8 Case Material: Molded Plastic, Green Molding Compound. UL Description and Applications Flammability Classification Rating 94V-0 (Note 1) This new generation MOSFET has been designed to minimize the on- Moisture Sensitivity: Level 1 per J-STD-020D state resistance (R ) and yet maintain superior switching DS(on) Terminals Connections: See Diagram performance, making it ideal for high efficiency power management applications. Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Motor control Weight: 0.074 grams (approximate) Backlighting DC-DC Converters Power management functions D S D S D G S D G D S Equivalent Circuit TOP VIEW TOP VIEW Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN3024LSS-13 N3024LS 13 12 2,500 Note: 1. Diodes, Inc. defines Green products as those which are Eu RoHS compliant and contain no halogens or antimony compounds further information about Diodes Inc.s Green Policy can be found on our website. For packaging details, go to our website. Marking Information N3024LS = Product Type Marking Code = Manufacturers Marking YY WW = Date Code Marking N3024LS YY = Year (ex: 09 = 2009) YY WW WW = Week (01-52) 1 of 8 July 2009 DMN3024LSS Diodes Incorporated www.diodes.com Document Revision: 3 A Product Line of Diodes Incorporated DMN3024LSS Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source voltage V 30 V DSS Gate-Source voltage V 20 V GS (Note 3) 8.5 Continuous Drain current V = 10V T = 70C (Note 3) I 6.8 A GS A D (Note 2) 6.4 Pulsed Drain current V = 10V (Note 4) I 36 A GS DM Continuous Source current (Body diode) (Note 3) I 4.5 A S Pulsed Source current (Body diode) (Note 4) I 36 A SM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit 1.6 (Note 2) Power dissipation 12.5 W P D Linear derating factor 2.8 mW/C (Note 3) 22.2 (Note 2) 80 Thermal Resistance, Junction to Ambient C/W R JA (Note 3) 45 Thermal Resistance, Junction to Lead (Note 5) 35 C/W R JL Operating and storage temperature range -55 to 150 T , T C J STG Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t 10 sec. 4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 5. Thermal resistance from junction to solder-point (at the end of the drain lead): the device is operating in a steady-state condition. 2 of 8 July 2009 DMN3024LSS Diodes Incorporated www.diodes.com Document Revision: 3