DMN3029LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low R ensures on state losses are minimized DS(ON) I D V R (BR)DSS DS(ON) Small form factor thermally efficient package enables higher T = 25C A density end products 8.0A 18.6m V = 10V GS Occupies just 33% of the board area occupied by SO-8 enabling 30V smaller end product 6.5A 26.5m V = 4.5V GS 100% UIS (Avalanche) rated 100% Rg tested Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching DS(on) performance, making it ideal for high efficiency power management Mechanical Data applications. Case: POWERDI3333-8 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Backlighting Terminals: Finish Matte Tin annealed over Copper leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Power management functions Weight: 0.072 grams (approximate) POWERDI3333-8 Pin 1 S S 8 1 S G 7 2 6 3 D D 5 4 D D Top View Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN3029LFG-7 POWERDI3333-8 2000 / Tape & Reel DMN3029LFG-13 POWERDI3333-8 3000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN3029LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 25 V GSS Steady T = +25C 5.3 A Continuous Drain Current (Note 5) V = 10V I A GS D State = +70C 4.2 T A Steady T = +25C 8.0 A A Continuous Drain Current (Note 6) V = 10V I GS D State 6.3 T = +70C A T = +25C 9.5 A Continuous Drain Current (Note 6) V = 10V t 10s I A GS D 7.7 T = +70C A T = +25C Steady 6.5 A A Continuous Drain Current (Note 6) V = 4.5V I GS D State 4.9 T = +70C A T = +25C 7.8 A Continuous Drain Current (Note 6) V = 4.5V t 10s I A GS D 6.2 T = +70C A Pulsed Drain Current (Note 7) I 70 A DM Avalanche Current (Notes 7 & 8) 18 A I AR Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH 16 mJ E AR Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 5) 1.0 W P D 130.6 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 5) R A JA Power Dissipation (Note 6) P 2.07 W D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 62.5 C/W A JA Power Dissipation (Note 6) t 10s P 3.0 W D Thermal Resistance, Junction to Ambient T = +25C (Note 6) t 10s R 43.8 C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on 2 x 2 FR-4 PCB with high coverage 2 oz. Copper, single sided. 7. Repetitive rating, pulse width limited by junction temperature. 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AR AR J 100 400 P = 10s R DS(on) W Limited 350 Single Pulse R = 60C/W JA R = r * R JA(t) (t) JA 10 300 T - T = P * R JA JA(t) DC 250 P = 10s W 1 200 P = 1s W P = 100ms W P = 10ms 150 W P = 1ms W P = 100s W 0.1 100 T = 150C J(max) T = 25C A 50 Single Pulse 0.01 0 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1,000 V , DRAIN-SOURCE VOLTAGE (V) t1, PULSE DURATION TIME (sec) DS Fig. 2 Single Pulse Maximum Power Dissipation Fig. 1 SOA, Safe Operation Area POWERDI is a registered trademark of Diodes Incorporated. 2 of 7 October 2012 DMN3029LFG Diodes Incorporated www.diodes.com Document number: DS35448 Rev. 7 - 2 NEW PRODUCT ADVANCE INFORMATION I, DRAIN CURRENT (A) D P , PEAK TRANSIENT POIWER (W) (PK)