DMN3190LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D (MAX) BV R Package DSS DS(ON) (MAX) Low Input Capacitance T = +25C A Fast Switching Speed 190m V = 10V 1A GS ESD Protected Gate 30V SOT363 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 335m V = 4.5V 0.75A GS Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and Description manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. This MOSFET has been designed to minimize the on-state resistance DMN3190LDW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 1000 A mA I D State 900 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 1300 A t < 5s I mA D 1000 T = +70C A Maximum Continuous Body Diode Forward Current (Note 5) 0.5 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 9.6 A I DM Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 0.32 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 395 C/W R JA Total Power Dissipation (Note 6) T = +25C P 0.4 W A D Thermal Resistance, Junction to Ambient (Note 6) Steady State R 320 JA C/W Thermal Resistance, Junction to Case 143 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 30V, V = 0V C DSS DS GS Gate-Source Leakage I 10 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.5 2.8 V V = V , I = 250A GS(TH) DS GS D 122 190 VGS = 10V, ID = 1.3A Static Drain-Source On-Resistance R m DS(ON) 181 335 V = 4.5V, I = 290mA GS D Diode Forward Voltage 1.2 V V V = 0V, I = 250mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 87 pF C iss V = 20V, V = 0V, DS GS Output Capacitance 17 pF C oss f = 1.0MHz Reverse Transfer Capacitance 12 pF C rss Gate Resistance R 69.8 f = 1MHz, V = 0V, V = 0V g GS DS Total Gate Charge (V = 4.5V) Q 0.9 nC GS g Total Gate Charge (V = 10V) Q 2.0 nC GS g V = 10V, I = 250mA DS D Gate-Source Charge Q 0.3 nC gs Gate-Drain Charge 0.3 nC Qgd Turn-On Delay Time 4.5 ns t D(ON) Turn-On Rise Time 8.9 ns t V = 30V, V = 10V, R DD GS Turn-Off Delay Time 30.3 ns R = 10, I = 100mA t G D D(OFF) Turn-Off Fall Time 15.6 ns t F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMN3190LDW October 2019 Diodes Incorporated www.diodes.com Document number: DS36192 Rev. 5 - 2