DMN3018SSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Input Capacitance T = 25C A Fast Switching Speed 21m V = 10V 7.3A ESD Protected Gate GS Green component and RoHS compliant (Notes 1 & 2) 30V 35m V = 4.5V 5.5A GS Qualified to AEC-Q101 standards for High Reliability Mechanical Data Description and Applications Case: SO-8 Case Material: Molded Plastic,Gree Molding Compound. This MOSFET has been designed to minimize the on-state resistance UL Flammability Classification Rating 94V-0 (R ) and yet maintain superior switching performance, making it DS(on) Moisture Sensitivity: Level 1 per J-STD-020 ideal for high efficiency power management applications. Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Backlighting Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.008 grams (approximate) DC-DC Converters Drain SO-8 S D Body Diode S D Gate S D Gate G D Protection Source Diode ESD PROTECTED Top View Top View Equivalent Circuit Per Element Pin Configuration Ordering Information (Note 3) Part Number Case Packaging DMN3018SSS-13 SO-8 2500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc.s Green policy can be found on our website at DMN3018SSS Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage 30 V V DSS Gate-Source Voltage 25 V V GSS Steady T = 25C 7.3 A I A D State 5.7 T = 70C A Continuous Drain Current (Note 5) V = 10V GS T = 25C 9.7 A t<10s I A D 7.8 T = 70C A Steady T = 25C 5.5 A A I D State 4.3 T = 70C A Continuous Drain Current (Note 5) V = 4.5V GS T = 25C 7.6 A t<10s I A D T = 70C 5.8 A 60 A Pulsed Drain Current (10s pulse, duty cycle = 1%) I DM Maximum Body Diode continuous Current 2.5 A I S Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Units T = 25C 1.4 A Total Power Dissipation (Note 4) W P D T = 70C 0.9 A Steady state 90 C/W Thermal Resistance, Junction to Ambient (Note 4) R JA t<10s 50 C/W T = 25C 1.7 A Total Power Dissipation (Note 5) W P D T = 70C 1.1 A Steady state 75 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 42 C/W Thermal Resistance, Junction to Case (Note 5) 7.6 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 30 - - V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I - - 1 A V = 24V, V = 0V DSS DS GS Gate-Source Leakage I - - 10 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 1 1.7 2.1 V V = V , I = 250 A GS(th) DS GS D - 15 21 V = 10V, I = 10A GS D m Static Drain-Source On-Resistance R DS (ON) - 20 35 V = 4.5V, I = 8.5A GS D Forward Transfer Admittance - 8.3 - S Y V = 5V, I = 6.9A fs DS D Diode Forward Voltage 0.5 - 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C - 697 - pF iss V = 15V, V = 0V, DS GS Output Capacitance C - 97 - pF oss f = 1.0MHz Reverse Transfer Capacitance C - 67 - pF rss Gate resistance R - 1.47 - V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = 4.5V) Q - 6.0 - nC GS g Total Gate Charge (V = 10V) Q - 13.2 - nC GS g V = 10V, V = 15V, GS DS Gate-Source Charge - 2.2 - nC I = 9A Q D gs Gate-Drain Charge - 1.8 - nC Q gd Turn-On Delay Time - 4.3 - ns t D(on) Turn-On Rise Time - 4.4 - ns t V = 15V, V = 10V, r DD GS Turn-Off Delay Time t - 20.1 - ns R = 15 ,I = 1A, R = 6 D(off) L D G Turn-Off Fall Time t - 4.1 - ns f Reverse Recovery Time T - 7.3 - ns rr I = 9A, di/dt = 500A/s F Reverse Recovery Charge Q - 7.9 - nC rr Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 6 February 2012 DMN3018SSS Diodes Incorporated www.diodes.com Document number: DS35501 Rev. 5 - 2 NEW PRODUCT ADVANCE INFORMATION