DMN3200U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT23 90m V = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL GS Flammability Classification Rating 94V-0 110m V = 2.5V GS Moisture Sensitivity: Level 1 per J-STD-020 200m V = 1.5V GS Terminal Connections: See Diagram Low Gate Threshold Voltage Terminals: Finish Matte Tin Annealed over Copper Low Input Capacitance Leadframe. Solderable per MIL-STD-202, Method 208 ESD Protected Gate Weight: 0.008 grams (Approximate) Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT23 D D G ESD PROTECTED TO 3kV G S Gate Protection S Diode Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number Case Packaging DMN3200U-7 SOT23 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3200U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 8 V GSS Drain Current (Note 5) I 2.2 A D Pulsed Drain Current (Note 5) I 9 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 650 mW D Thermal Resistance, Junction to Ambient R 192 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I 5 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 0.45 1.0 V V = V , I = 250A VGS(TH) DS GS D V = 4.5V, I = 2.2A GS D 62 90 Static Drain-Source On-Resistance 70 110 m R V = 2.5V, I = 2A DS(ON) GS D 150 200 V = 1.5V, I = 0.67A GS D Forward Transfer Admittance 5 S Y V = 5V, I = 2.2A fs DS D Diode Forward Voltage (Note 6) V 0.9 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 290 pF iss V = 10V, V = 0V DS GS Output Capacitance C 66 pF oss f = 1.0MHz Reverse Transfer Capacitance C 35 pF rss Turn-On Delay Time t 40.2 ns D(ON) Turn-On Rise Time t 43.1 ns R V = 10V, I = 2A, V = 4.5V, DD D GEN Turn-Off Delay Time t 471 ns R = 5, R = 6 D(OFF) L GEN Turn-Off Fall Time 104 ns t F Notes: 5. Device mounted on FR-4 PCB, on minimum recommended pad layout on 2oz. Copper pads. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 6 May 2016 DMN3200U Diodes Incorporated www.diodes.com Document number: DS31188 Rev. 7 - 2 NEW PRODUC