STS9NF3LL STMicroelectronics

STS9NF3LL N-CHANNEL 30V - 0.016 - 9A SO-8 LOW GATE CHARGE STripFET II POWER MOSFET TYPE V R I DSS DS(on) D STS9NF3LL 30 V <0.019 9 A TYPICAL R (on) = 0.016 DS OPTIMAL R (on) x Qg TRADE-OFF 4.5V DS CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis uniqueSingle Feature SO-8 Siz strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and INTERNAL SCHEMATIC DIAGRAM high efficiency are of paramount importance. APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PC S ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 30 V DS GS V Drain-gate Voltage (R = 20 k) 30 V DGR GS V Gate- source Voltage 16 V GS I Drain Current (continuos) at T = 25C 9A D C I Drain Current (continuos) at T = 100C 5.6 A D C I () Drain Current (pulsed) 36 A DM P Total Dissipation at T = 25C 2.5 W tot C () Pulse width limited by safe operating area. November 2001 1/8 . Obsolete Product(s) - Obsolete Product(s)STS9NF3LL THERMAL DATA Rthj-amb (*) Thermal Resistance Junction-ambient Max 50 C/W T Maximum Operating Junction Temperature 150 C j T Storage Temperature -55 to 150 C stg (*) 2 When mounted on FR-4 board with 0.5 in pad of Cu. ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit Drain-source I = 250 A, V = 0 D GS V 30 V (BR)DSS Breakdown Voltage Zero Gate Voltage V = Max Rating 1 A I DS DSS Drain Current (V = 0) V = Max Rating T = 125C 10 A GS DS C Gate-body Leakage V = 16 V 100 nA GS I GSS Current (V = 0) DS (*) ON Symbol Parameter Test Conditions Min. Typ. Max. Unit V V = V I = 250 A Gate Threshold Voltage 1V GS(th) DS GS D V = 10 V I = 4.5 A Static Drain-source On GS D 0.016 0.019 R DS(on) Resistance V = 4.5 V I = 4.5 A 0.019 0.022 GS D DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit (*) g V =15 V I =4 A Forward Transconductance 12.5 S fs DS D C Input Capacitance V = 25V, f = 1 MHz, V = 0 800 pF DS GS iss Output Capacitance 250 pF C oss Reverse Transfer 60 pF C rss Capacitance 2/8 Obsolete Product(s) - Obsolete Product(s)