STS8DN6LF6AG STMicroelectronics

STS8DN6LF6AG Datasheet Automotive-grade dual N-channel 60 V, 21 m typ., 8 A STripFET F6 Power MOSFET in a SO-8 package 5 Features 8 V R max. I P Order code DS DS(on) D TOT STS8DN6LF6AG 60 V 24 m 8 A 3.2 W 4 1 SO-8 AEC-Q101 qualified Very low on-resistance Very low gate charge D1(7, 8) D2(5, 6) High avalanche ruggedness Low gate drive power loss Logic level G1(2) G2(4) Applications Switching applications S1(1) S2(3) Description SC12820 This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all packages. DS(on) Product status link STS8DN6LF6AG Product summary Order code STS8DN6LF6AG Marking 8DN6LF6 Package SO-8 Packing Tape and reel DS11953 - Rev 2 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STS8DN6LF6AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 60 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 8 amb (1) I A D Drain current (continuous) at T = 100 C 5.8 amb (2) I Drain current (pulsed) 32 A DM P Total power dissipation at T = 25 C (one channel active) 3.2 W TOT amb T Storage temperature range C stg -55 to 175 T Operating junction temperature range C J 1. When mounted on a 1-inch FR-4, 2 Oz copper board, t < 10 s. 2. Pulse width is limited by safe operating area . Table 2. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance, junction-to-ambient 47 C/W thJA 1. When mounted on a 1-inch FR-4, 2 Oz copper board, t < 10 s. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, not repetitive 6 A AV (1) E Single pulse avalanche energy 72 mJ AS 1. Starting T = 25 C, I = I , V = 43.5 V. J D AV DD DS11953 - Rev 2 page 2/14