STS9P3LLH6 Datasheet P-channel -30 V, 12 m typ., -9 A, STripFET H6 Power MOSFET in an SO-8 package 5 Features 8 V R max. I Order code DS DS(on) D STS9P3LLH6 -30 V 15 m -9 A 4 1 Very low on-resistance Very low gate charge SO-8 High avalanche ruggedness Low gate drive power loss D(5, 6, 7, 8) Applications Switching applications G(4) Description This device is a P-channel Power MOSFET developed using the STripFET H6 S(1, 2, 3) technology with a new trench gate structure. The resulting Power MOSFET exhibits AM01475v4 very low R in all packages. DS(on) Product status link STS9P3LLH6 Product summary Order code STS9P3LLH6 Marking 9K3L Package SO-8 Packing Tape and reel DS10146 - Rev 3 - February 2021 www.st.com For further information contact your local STMicroelectronics sales office.STS9P3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage -30 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25C -9 amb (1) I A D Drain current (continuous) at T = 100C -5.6 amb (2) I Drain current (pulsed) -36 A DM (1) P Total power dissipation at T = 25C 2.7 W amb TOT T Storage temperature range C stg -55 to 150 T Operating junction temperature range C J 1. This value is rated according to R . thJA 2. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance, junction-to-ambient 47 C/W thJA 1. When mounted on 1 inch FR-4 board, 2 oz. Cu., t 10 s. DS10146 - Rev 3 page 2/13