STS1NK60Z STMicroelectronics

STS1NK60Z N-CHANNEL 600V - 13 -0.25A -SO-8 Zener-Protected SuperMESH Power MOSFET TYPE V R I Pw DSS DS(on) D STS1NK60Z 600 V < 15 0.25 A 2 W TYPICAL R (on) = 13 DS EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK SO-8 GATE CHARGE MINIMIZED DESCRIPTION The SuperMESH series is obtained through an extreme optimization of STs well established strip- INTERNAL SCHEMATIC DIAGRAM based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh products. APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS SWITH MODE POWER SUPPLIES (SMPS) ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STS1NK60Z S1NK60Z SO-8 TAPE & REEL June 2003 1/8STS1NK60Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V =0) 600 V DS GS V Drain-gate Voltage (R =20k) 600 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuous) at T = 25C 0.25 A D C I Drain Current (continuous) at T = 100C 0.16 A D C I ( ) Drain Current (pulsed) 1 A DM P Total Dissipation at T = 25C 2W TOT C Derating Factor 0.016 W/C V Gate source ESD(HBM-C=100pF, R=1.5K) 800 V ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns T Operating Junction Temperature -55to150 C j T Storage Temperature -55to150 C stg ( ) Pulse width limited by safe operating area (1) I 0.3A, di/dt 200A/s, V V ,T T SD DD (BR)DSS j JMAX. THERMAL DATA Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Gate-Source Breakdown Igs= 1mA (Open Drain) 30 V GSO Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/8