X-On Electronics has gained recognition as a prominent supplier of STU3N45K3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STU3N45K3 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STU3N45K3 STMicroelectronics

STU3N45K3 electronic component of STMicroelectronics
STU3N45K3 STMicroelectronics
STU3N45K3 MOSFETs
STU3N45K3  Semiconductors

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See Product Specifications
Part No. STU3N45K3
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Ch 450V 3.2 Ohm 1.8A SuperMESH 3
Datasheet: STU3N45K3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
300: USD 0.4634 ea
Line Total: USD 139.02 
Availability - 0
MOQ: 300  Multiples: 75
Pack Size: 75
Availability Price Quantity
0
Ship by Wed. 23 Apr to Tue. 29 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.5134
6000 : USD 0.5083
9000 : USD 0.5031
12000 : USD 0.4981
15000 : USD 0.4931
24000 : USD 0.4882
30000 : USD 0.4834
75000 : USD 0.4785
150000 : USD 0.4737

0
Ship by Mon. 21 Apr to Wed. 23 Apr
MOQ : 1
Multiples : 1
1 : USD 2.2812
10 : USD 0.8346
100 : USD 0.6147
500 : USD 0.4853
1000 : USD 0.3941
3000 : USD 0.367

0
Ship by Wed. 23 Apr to Tue. 29 Apr
MOQ : 300
Multiples : 75
300 : USD 0.4634
1000 : USD 0.3706
2000 : USD 0.3128
5000 : USD 0.3011

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STU3N45K3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STU3N45K3 and other electronic components in the MOSFETs category and beyond.

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STU3N45K3 N-channel 450 V - 3.3 typ., 1.8 A Zener-protected SuperMESH3 Power MOSFET in a IPAK package Datasheet - production data Features R DS(on) Order code V I P DSS D w max TAB STU3N45K3 450 V < 4 1.8 A 27 W 3 100% avalanche tested 2 1 Extremely high dv/dt capability IPAK Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener protected Figure 1. Internal schematic diagram D(2, TAB) Applications Switching applications Description G(1) This SuperMESH3 Power MOSFET is the result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. This device boasts an extremely low on- resistance, superior dynamic performance and S(3) high avalanche capability, rendering it suitable for AM01476v1 the most demanding applications. Table 1.Device summary Order code Marking Package Packaging STU3N45K3 3N45K3 IPAK Tube June 2013 DocID17206 Rev 3 1/14 This is information on a product in full production. www.st.comContents STU3N45K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 13 2/14 DocID17206 Rev 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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