STD3N62K3, STF3N62K3, STU3N62K3 Datasheet N-channel 620 V, 2.2 typ., 2.7 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages Features Order code V R max. I Package DS DS(on) D STD3N62K3 2.7 A DPAK STF3N62K3 620 V 2.5 2.7 A TO-220FP STU3N62K3 2.7 A IPAK D(2, TAB) 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance G(1) Improved diode reverse recovery characteristics Zener-protected Applications S(3) AM01475V1 Switching applications Description These MDmesh K3 Power MOSFETs are the result of improvements applied to STMicroelectronics MDmesh technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Product status link STD3N62K3 STF3N62K3 STU3N62K3 DS5888 - Rev 3 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD3N62K3, STF3N62K3, STU3N62K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK TO-220FP IPAK V Drain-source voltage 620 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 2.7 2.7 2.7 A D C (1) I Drain current (continuous) at T = 100 C 1.7 1.7 1.7 A D C (2) (1) I Drain current (pulsed) 10.8 10.8 10.8 A DM P Total dissipation at T = 25 C 45 20 45 W TOT C Gate-source human body model ESD 2.5 kV (C = 100 pF, R = 1.5 k) (3) Peak diode recovery voltage slope 9 V/ns dv/dt Insulation withstand voltage (RMS) from all three leads to external heat sink V 2500 V ISO (t = 1 s T = 25 C) C T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 2.7 A, di/dt 200 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220FP IPAK R Thermal resistance junction-case 2.78 6.25 2.78 C/W thj-case R Thermal resistance junction-ambient 62.5 100 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not-repetitive 2.7 A AR (2) E Single pulse avalanche energy 100 mJ AS 1. Pulse width limited by T max. j 2. Starting T = 25 C, I = I , V = 50 V. j D AR DD DS5888 - Rev 3 page 2/27