X-On Electronics has gained recognition as a prominent supplier of STU1HN60K3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STU1HN60K3 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STU1HN60K3 STMicroelectronics

STU1HN60K3 electronic component of STMicroelectronics
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Part No.STU1HN60K3
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 600V; 0.76A; 27W; IPAK
Datasheet: STU1HN60K3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.812 ea
Line Total: USD 0.81 
Availability - 37
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
37
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.812
5 : USD 0.3248
25 : USD 0.2912
100 : USD 0.273

   
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We are delighted to provide the STU1HN60K3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STU1HN60K3 and other electronic components in the MOSFETs category and beyond.

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STD1HN60K3, STU1HN60K3 N-channel 600 V, 6.7 typ., 1.2 A SuperMESH3 Power MOSFET in DPAK and IPAK packages Datasheet production data Features R DS(on) Order codes V I P DS D TOT max STD1HN60K3 TAB TAB 600 V 8 1.2 A 27 W STU1HN60K3 3 3 1 2 1 100% avalanche tested DPAK IPAK Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Figure 1. Internal schematic diagram Zener-protected D(2, TAB) Applications Switching applications Description G(1) These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. These devices boast an extremely low on- S(3) resistance, superior dynamic performance and AM01476v1 high avalanche capability, rendering them suitable for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STD1HN60K3 DPAK Tape and reel 1HN60K3 STU1HN60K3 IPAK Tube April 2013 DocID024422 Rev 1 1/19 This is information on a product in full production. www.st.com 19Contents STD1HN60K3, STU1HN60K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 16 6 Revision history . 18 2/19 DocID024422 Rev 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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