STU9HN65M2 STMicroelectronics

STU9HN65M2 N-channel 650 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STU9HN65M2 650 V 0.82 5.5 A Extremely low gate charge 3 2 Excellent output capacitance (C ) profile OSS 1 100% avalanche tested Zener-protected IPAK Applications Switching applications Figure 1: Internal schematic diagram Description D(2, TAB) This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high G(1) efficiency converters. Table 1: Device summary Order code Marking Package Packing STU9HN65M2 9HN65M2 IPAK Tube S(3) AM15572v1 tab October 2015 DocID027605 Rev 3 1/12 www.st.com This is information on a product in full production. Contents STU9HN65M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 IPAK (TO-251) type A package information ...................................... 9 5 Revision history ............................................................................ 11 2/12 DocID027605 Rev 3