STU8NM50N STMicroelectronics

STD8NM50N, STP8NM50N, STU8NM50N N-channel 500 V, 0.73 typ., 5 A MDmeshII Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet production data Features TAB Order codes V T R max. I 3 DSS JMAX DS(on) D 1 STD8NM50N DPAK STP8NM50N 550 V < 0.79 5 A STU8NM50N TAB 100% avalanche tested TAB Low input capacitance and gate charge Low gate input resistance 3 3 2 2 1 1 TO-220 IPAK Applications Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs 4 developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order codes Marking Packages Packaging STD8NM50N DPAK Tape and reel STP8NM50N 8NM50N TO-220 Tube STU8NM50N IPAK September 2012 Doc ID 17413 Rev 6 1/19 This is information on a product in full production. www.st.com 19Contents STD8NM50N, STP8NM50N, STU8NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 16 6 Revision history . 18 2/19 Doc ID 17413 Rev 6