STU80N4F6 STMicroelectronics

STU80N4F6 N-channel 40 V, 5.8 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a IPAK package Datasheet production data Features Order code V R max I DS DS(on) D STU80N4F6 40 V 6.3 m 80 A TAB Low gate charge 3 Very low on-resistance 2 1 High avalanche ruggedness IPAK Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET % 7 DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) * 6 0 Y Table 1. Device summary Order code Marking Package Packaging STU80N4F6 80N4F6 IPAK Tube February 2014 DocID023839 Rev 4 1/13 This is information on a product in full production. www.st.com 13Contents STU80N4F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID023839 Rev 4