X-On Electronics has gained recognition as a prominent supplier of STU80N4F6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STU80N4F6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STU80N4F6 STMicroelectronics

Name: STU80N4F6
Brand: STMicroelectronics
SKU: STU80N4F6_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STU80N4F6 electronic component of STMicroelectronics

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See Product Specifications

Part No.	STU80N4F6
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	STMicroelectronics MOSFET N-Ch 40 V 5.8 mOhm 80 A STripFET(TM)
Datasheet:	STU80N4F6 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.0588 ea
Line Total: USD 2.06

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

STU80N4F6 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 07 Jan to Mon. 13 Jan MOQ : 1 Multiples : 1	1 : USD 2.0588 10 : USD 1.7744 100 : USD 1.4255 500 : USD 1.1712 1000 : USD 0.9704 2000 : USD 0.9035

0 Ship by Fri. 03 Jan to Tue. 07 Jan MOQ : 1 Multiples : 1	1 : USD 4.7881 10 : USD 1.7247 25 : USD 1.6345 100 : USD 1.3938 500 : USD 1.1431 1000 : USD 0.9466

0 Ship by Tue. 07 Jan to Mon. 13 Jan MOQ : 38 Multiples : 1	38 : USD 1.0512

We are delighted to provide the STU80N4F6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STU80N4F6 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STU80N4F6 N-channel 40 V, 5.8 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a IPAK package Datasheet production data Features Order code V R max I DS DS(on) D STU80N4F6 40 V 6.3 m 80 A TAB Low gate charge 3 Very low on-resistance 2 1 High avalanche ruggedness IPAK Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET % 7 DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) * 6 0 Y Table 1. Device summary Order code Marking Package Packaging STU80N4F6 80N4F6 IPAK Tube February 2014 DocID023839 Rev 4 1/13 This is information on a product in full production. www.st.com 13Contents STU80N4F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID023839 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 80 A 80 A
Vds - Drain-Source Breakdown Voltage 40 V 40 V
Rds On - Drain-Source Resistance 5.5 mOhms 5.5 mOhms
Transistor Polarity n - channel n - channel
Vgs th - Gate-Source Threshold Voltage 4 V 4 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 70 W 70 W
Mounting Style through hole through hole
Package / Case IPAK - 3 IPAK - 3
Packaging Tube Tube
Technology si si
Number of Channels 1 channel 1 channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 36 nC 36 nC
Channel Mode enhancement enhancement
Qualification aec - q101 aec - q101
Tradename stripfet stripfet
Configuration single single
Series n - channel stripfet n - channel stripfet
Brand Stmicroelectronics Stmicroelectronics
Fall Time 11.9 ns 11.9 ns
Rise Time 7.6 ns 7.6 ns
Factory Pack Quantity : 3000 3000
Typical Turn-Off Delay Time 46.1 ns 46.1 ns
Typical Turn-On Delay Time 10.5 ns 10.5 ns
Transistor Type 1 n - channel 1 n - channel
Cnhts 8541290000 8541290000
Hts Code 8541290075 8541290075
Mxhts 85412999 85412999
Product Type mosfet mosfet
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000