STD7NM60N, STF7NM60N, STU7NM60N Datasheet N-channel 600 V, 0.8 typ., 5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and IPAK packages Features V R max. I Order code Package DS DS(on) D STD7NM60N DPAK STF7NM60N 600 V 0.9 5 A TO-220FP STU7NM60N IPAK D(2, TAB) 100% avalanche tested Low input capacitance and gate charge Low gate input resistance G(1) Applications Switching applications S(3) AM01475v1 noZen Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STD7NM60N STF7NM60N STU7NM60N DS6523 - Rev 5 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD7NM60N, STF7NM60N, STU7NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, IPAK TO-220FP V Drain-source voltage 600 V DS V Gate-source voltage 25 V GS (1) I Drain current (continuous) at T = 25 C 5 5 A D C (1) I Drain current (continuous) at T = 100 C 3 3 A D C (2) (1) I Drain current (pulsed) 20 20 A DM P Total dissipation at T = 25 C 45 20 W TOT C Insulation withstand voltage (RMS) from all three V 2.5 kV ISO leads to external heat-sink (t = 1 s, T = 25 C) C (3) Peak diode recovery voltage slope 15 V/ns dv/dt T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 5 A, di/dt 100 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220FP IPAK R Thermal resistance junction-case 2.78 6.25 2.78 C/W thj-case R Thermal resistance junction-ambient 62.5 100 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not-repetitive 2 A AS (2) E Single pulse avalanche energy 119 mJ AS 1. Pulse width limited by T max. j 2. Starting T = 25 C, I = I , V = 50 V. j D AS DD DS6523 - Rev 5 page 2/26