STU7N105K5 STMicroelectronics

STP7N105K5, STU7N105K5, STW7N105K5 N-channel 1050 V, 1.4 typ., 4 A MDmesh K5 Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet - production data TAB Features TAB Order code V R max. I P DS DS(on) D TOT 3 STP7N105K5 2 IPAK 1 STU7N105K5 1050 V 2 4 A 110 W STW7N105K5 3 TO-220 2 1 Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected 3 2 TO-247 1 Applications Figure 1: Internal schematic diagram Switching applications D(2, TAB) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic G(1) reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) AM01476v1 Table 1: Device summary Order code Marking Package Packaging STP7N105K5 TO-220 STU7N105K5 7N105K5 IPAK Tube STW7N105K5 TO-247 October 2016 DocID026183 Rev 2 1/18 www.st.com This is information on a product in full production. Contents STP7N105K5, STU7N105K5, STW7N105K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-220 package information ........................................................... 11 4.2 IPAK package information ............................................................... 13 4.3 TO-247 package information ........................................................... 15 5 Revision history ............................................................................ 17 2/18 DocID026183 Rev 2