VEC2415 Power MOSFET 60V, 80m , 3A, Dual N-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features V R (on) Max I DSS DS D Max Low On-Resistance 80m 10V 4V drive 60V 106m 4.5V 3A Low-Profile Package 116m 4V ESD Diode-Protected Gate Pb-Free and RoHS compliance ELECTRICAL CONNECTION Halogen Free compliance : VEC2415-TL-W N-Channel Typical Applications 87 6 5 Motor Driver 1 : Source1 DC/DC Converter 2:Gate1 3 : Source2 SPECIFICATIONS 4:Gate2 5:Drain2 ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 6:Drain2 Parameter Symbol Value Unit 7:Drain1 8:Drain1 Drain to Source Voltage V 60 V DSS 12 34 Gate to Source Voltage V 20 V GSS Drain Current (DC) I 3 A D Drain Current (Pulse) PACKING TYPE : TL MARKING I 12 DP A PW 10 s, duty cycle 1% Power Dissipation UN When mounted on ceramic substrate P 0.9 D W 2 LOT No. (900mm 0.8mm) 1unit TL Total Dissipation When mounted on ceramic substrate P 1.0 W T 2 (900mm 0.8mm) Junction Temperature Tj 150 C ORDERING INFORMATION See detailed ordering and shipping Storage Temperature Tstg 55 to +150 C information on page 5 of this data sheet. Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction to Ambient R 138.8 C/W When mounted on ceramic substrate JA 2 (900mm 0.8mm) 1unit Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : October 2015 - Rev. 1 VEC2415/D VEC2415 ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 60 V BR DSS D GS Zero-Gate Voltage Drain Current I V =60V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V = 16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I=1mA 1.2 2.6 V GS DS D Forward Transconductance g V =10V, I=1.5A 2.6 S FS DS D R (on)1 I =1.5A, V=10V 62 80 m DS D GS Static Drain to Source On-State 76 106 R (on)2 I =0.75A, V =4.5V m DS D GS Resistance R (on)3 I =0.75A, V =4V 83 116 m DS D GS Input Capacitance Ciss 505 pF Output Capacitance Coss 57 pF V =20V, f=1MHz DS Reverse Transfer Capacitance Crss 37 pF Turn-ON Delay Time t (on) 7.3 ns d Rise Time t 7.5 ns r See specified Test Circuit Turn-OFF Delay Time 41 ns t (off) d Fall Time 22 ns t f Total Gate Charge Qg 10 nC Gate to Source Charge Qgs 1.6 nC V =30V, V =10V, I =3A DS GS D Gate to Drain Miller Charge Qgd 2.1 nC Forward Diode Voltage V SD I =3A, V=0V 0.81 1.2 V S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =30V IN DD 10V 0V I =1.5A D V IN R =20 L D V OUT PW=10s D.C.1% G VEC2415 P.G 50 S www.onsemi.com 2