VN2210 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from Secondary Breakdown VN2210 is an Enhancement-mode (normally-off) transistor that utilizes a vertical Double-diffused Low Power Drive Requirement Metal-Oxide Semiconductor (DMOS) structure and a Ease of Paralleling well-proven silicon gate manufacturing process. This Low C and Fast Switching Speeds ISS combination produces a device with the power Excellent Thermal Stability handling capabilities of bipolar transistors as well as Integral Source-drain Diode the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of High Input Impedance and High Gain all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Applications Vertical DMOS Field-Effect Transistors (FETs) are Motor Controls ideally suited to a wide range of switching and Converters amplifying applications where high breakdown voltage, Amplifiers high input impedance, low input capacitance and fast switching speeds are desired. Switches Power Supply Circuits Drivers (Relays, Hammers, Solenoids, Lamps, Memory, Displays, Bipolar Transistors, etc.) Package Types TO-92 TO-39 DRAIN GATE SOURCE SOURCE DRAIN GATE 2016 Microchip Technology Inc. DS20005559A-page 1VN2210 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Drain-to-source Voltage ........................................................................................................................................BV DSS Drain-to-gate Voltage ............................................................................................................................................BV DGS Gate-to-source Voltage ........................................................................................................................................... 20V Operating and Storage Temperatures ................................................................................................. 55C to +150C Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Electrical Specifications: T = 25C unless otherwise specified. A Parameters Sym. Min. Typ. Max. Units Conditions DC PARAMETERS (Note 1 unless otherwise specified) 100 V V = 0V, I = 10 mA Drain-to-source Breakdown Voltage BV DSS GS D Gate Threshold Voltage V 0.8 2.4 V V = V , I = 10 mA GS(th) GS DS D Change in V with Temperature V 4.3 5.5 mV/C V = V , I = 10 mA (Note 2) GS(th) GS(th) GS DS D 100 nA V = 20V, V = 0V Gate Body Leakage Current I GSS GS DS 50 A V = 0V, V = Maximum rating GS DS Zero Gate Voltage Drain Current I V = 0.8 maximum rating, DSS DS 10 mA V = 0V, T = 125C (Note 2) GS A 3 4.5 V = 5V, V = 25V GS DS ON-State Drain Current I A D(ON) = 10V, V = 25V 8 17 V GS DS Static Drain-to-source ON-State Resis- 0.4 0.5 V = 5V, I = 1A GS D R DS(ON) tance 0.27 0.35 V = 10V, I = 4A GS D with Temperature R 0.85 1.2 %/C V = 10V, I = 4A (Note 2) Change in R DS(ON) DS(ON) GS D AC PARAMETERS (Note 2) Forward Transconductance G 1200 mmho V = 25V, I = 2A FS DS D 300 500 Input Capacitance C ISS Common Source Output Capacitance C 125 200 pF V = 0V, V = 25V, f = 1 MHz OSS GS DS Reverse Transfer Capacitance C 50 65 RSS 10 15 Turn-on Time t d(ON) Rise Time t 10 15 V = 25V, I = 2A, r DD D ns Turn-off Time t 50 65 R = 10 GEN d(OFF) 30 50 Fall Time t f DIODE PARAMETERS Diode Forward Voltage Drop V 1 1.6 V V = 0V, I = 4A (Note 1) SD GS SD 500 ns V = 0V, I = 1A (Note 2) Reverse Recovery Time t rr GS SD Note 1: All DC parameters are 100% tested at 25C unless otherwise stated. (Pulse test: 300 s pulse, 2% duty cycle) 2: Specification is obtained by characterization and is not 100% tested. DS20005559A-page 2 2016 Microchip Technology Inc.