MOSFET Power, N-Channel, UltraFET 55 V, 75 A, 7 m HUF75345G3, HUF75345P3, HUF75345S3S www.onsemi.com Description These N Channel power MOSFETs are manufactured using V R MAX I MAX DSS DS(ON) D the innovative UltraFET process. This advanced process technology 55 V 7 m 75 A achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low D reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, G low voltage bus switches, and power management in portable and batteryoperated products. S Features DRAIN (TAB) 75 A, 55 V TO2473 Simulation Models CASE 340CK Temperature Compensated PSPICE and SABER Models Thermal Impedance SPICE and SABER Models G D Peak Current vs Pulse Width Curve DRAIN (FLANGE) S UIS Rating Curve TO2203 These Devices are PbFree CASE 340AT G D S DRAIN (FLANGE) D2PAK3 CASE 418AJ G S MARKING DIAGRAM Y&Z&3&K 75345X Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot 75345X = Specific Device Code X = G/P/S ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: March, 2020 Rev. 3 HUF75345S3S/DHUF75345G3, HUF75345P3, HUF75345S3S PACKAGE MARKING AND ORDERING INFORMATION Part Number Package Brand HUF75345G3 TO2473 75345G HUF75345P3 TO2203 75345P HUF75345S3ST D2PAK3 75345S MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage (Note 1) 55 V DSS V Drain to Gate Voltage (R = 20 k ) (Note 1) 55 V DGR GS V Gate to Source Voltage 20 V GS I Drain Current Continuous (Figure 2) 75 A D I Drain Current Pulsed Figure 4 DM E Pulsed Avalanche Rating Figure 6 AS P Power Dissipation (T = 25C) 325 W D C Derate Above 25C 2.17 W/C T , T Operating and Storage Temperature 55 to +175 C J STG T Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s 300 C L T Maximum Temperature for Soldering Leads Package Body for 10 s 260 C pkg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. T = 25C to 150C J www.onsemi.com 2