DMT69M8LFV 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features 100% Unclamped Inductive Switching Ensures more reliable I max D BV R max DSS DS(ON) and robust end application T = +25C C Low On-Resistance 9.5m V = 10V GS 45A 60V Low Input Capacitance 13.3m V = 4.5V 36A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications This new generation MOSFET is designed to minimize the on-state Mechanical Data resistance (R ) and yet maintain superior switching performance, DS(ON) Case: PowerDI 3333-8 (Type UX) making it ideal for high efficiency power management applications. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. Synchronous Rectifier Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 (Type UX) Pin1 S S S G D D D D Top View Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number Case Packaging DMT69M8LFV-7 2000/Tape & Reel PowerDI3333-8 (Type UX) DMT69M8LFV-13 3000/Tape & Reel PowerDI3333-8 (Type UX) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMT69M8LFV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 60 V V DSS Gate-Source Voltage 16 V V GSS T = +25C 45 C A I D 37 T = +70C C Continuous Drain Current (Note 5) V = 10V GS T = +25C 11 A I A D 8.9 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 60 A I DM Maximum Continuous Body Diode Forward Current (Note 5) 2 A I S Avalanche Current, L = 0.1mH 20.3 A I AS Avalanche Energy, L = 0.1mH 20.6 mJ E AS V Spike t = 10s V 72 V DS SPIKE Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 2.2 W A D Thermal Resistance, Junction to Ambient (Note 5) 57 C/W R JA Total Power Dissipation (Note 5) T = +25C P 42 W C D Thermal Resistance, Junction to Case (Note 5) 3 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 7.5 9.5 V = 10V, I = 13.5A GS D Static Drain-Source On-Resistance m R DS(ON) 9.9 13.3 V = 4.5V, I = 11.5A GS D Diode Forward Voltage V 1.2 V V = 0V, I = 13.5A SD GS S DYNAMIC CHARACTERISTICS (Note 7) 1925 Input Capacitance pF Ciss V = 30V, V = 0V, DS GS Output Capacitance 438 pF C oss f = 1MHz Reverse Transfer Capacitance 41 pF C rss Gate Resistance 1.7 R V = 0V, V = 0V, f = 1MHz g DS GS 33.5 nC Total Gate Charge (V = 10V) Q GS g Total Gate Charge (V = 4.5V) Q 15.6 nC GS g VDS = 30V, ID = 13.5A Gate-Source Charge Q 4.7 nC gs Gate-Drain Charge Q 5.3 nC gd Turn-On Delay Time t 4.5 ns D(ON) Turn-On Rise Time t 8.6 ns R V = 30V, V = 10V, DD GS Turn-Off Delay Time 35.9 ns R = 6, I = 13.5A t G D D(OFF) Turn-Off Fall Time 15.7 ns t F Body Diode Reverse Recovery Time ns t 18.2 RR I = 13.5A, di/dt = 400A/s F Body Diode Reverse Recovery Charge nC Q 33.1 RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 7 DMT69M8LFV May 2018 Diodes Incorporated www.diodes.com Document number: DS39220 Rev. 3 - 2