1HP04CH Small Signal MOSFET 100V, 18, 170mA, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features V R (on) Max I DSS DS D Max High Voltage (100V) 18 10V 4V drive 100V 170mA 21 4V High Speed Switching and Low Loss ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance ELECTRICAL CONNECTION P-Channel Typical Applications 3 Lithium-ion Battery Charging and Discharging Cell Balance SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter SymbolValue Unit 1:Gate 1 2:Source Drain to Source Voltage V 100 V DSS 3:Drain Gate to Source Voltage V 20 V GSS Drain Current (DC) I 170 mA D 2 Drain Current (Pulse) I 680 DP mA PW 10s, duty cycle 1% PACKING TYPE : TL MARKING Power Dissipation When mounted on ceramic substrate P 0.6 D W 2 (900mm 0.8mm) Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage TL the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL RESISTANCE RATINGS See detailed ordering and shipping Parameter SymbolValue Unit information on page 5 of this data sheet. Junction to Ambient When mounted on ceramic substrate R 208 C/W JA 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : October 2015 - Rev. 1 1HP04CH/D WX LOTNo.1HP04CH ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 100 V BR DSS D GS Zero-Gate Voltage Drain Current I V =100V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I =100A 1.2 2.6 V GS DS D Forward Transconductance g V =10V, I =80mA 170 mS FS DS D R (on)1 I =80mA, V =10V 12.5 18 Static Drain to Source On-State DS D GS Resistance R (on)2 I =40mA, V =4V 14 21 DS D GS Input Capacitance Ciss 14 pF Output Capacitance Coss V =20V, f=1MHz 2.8 pF DS Reverse Transfer Capacitance Crss 0.9 pF Turn-ON Delay Time t (on) 21 ns d Rise Time t 18 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 200 ns d Fall Time t 81 ns f Total Gate Charge Qg 0.9 nC Gate to Source Charge Qgs V =50V, V =10V, I =170mA 0.14 nC DS GS D Gate to Drain Miller Charge Qgd 0.27 nC V Forward Diode Voltage SD I =170mA, V=0V 0.88 1.2 V S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V = --50V DD IN 0V --10V I = --80mA D V IN R =612.5 L D V OUT PW10s D.C.1% Rg G 1HP04CH P.G 50 S Rg=3k www.onsemi.com 2