STL6N3LLH6 STMicroelectronics

STL6N3LLH6 N-channel 30 V, 0.021 typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 2x2 package Datasheet - production data Features Order code V R max I P DS DS(on) D TOT 1 0.025 (V 10 V) GS= 2 STL6N3LLH6 30 V 6 A 2.4 W 3 0.04 (V 4.5 V) GS= Very low on-resistance 6 1 Very low gate charge 5 2 4 3 High avalanche ruggedness PowerFLAT 2x2 Low gate drive power loss Applications Switching applications Figure 1. Internal schematic diagram 1(D) 2(D) 3(G) Description This device is an N-channel Power MOSFET developed using the STripFET H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. D S 6(D) 5(D) 4(S) AM11269v1 Table 1. Device summary Order code Marking Package Packaging STL6N3LLH6 STG1 PowerFLAT 2x2 Tape and reel October 2015 DocID023231 Rev 3 1/13 This is information on a product in full production. www.st.comContents STL6N3LLH6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package information . 9 5 Revision history . 12 2/13 DocID023231 Rev 3