STL260N3LLH6 STMicroelectronics

STL260N3LLH6 Datasheet N-channel 30 V, 1.1 m typ., 260 A, STripFET H6 Power MOSFET in a PowerFLAT 5x6 package Features V R max. I Order code DS DS(on) D STL260N3LLH6 30 V 1.3 m 260 A Very low on-resistance Very low gate charge High avalanche ruggedness PowerFLAT 5x6 Low gate drive power loss D(5, 6, 7, 8) 8 7 6 5 Applications Switching applications G(4) Description This device is an N-channel Power MOSFET developed using the STripFET H6 1 2 3 4 technology with a new trench gate structure. The resulting Power MOSFET exhibits Top View very low R in all packages. S(1, 2, 3) DS(on) NG4D5678S123 Product status link STL260N3LLH6 Product summary Order code STL260N3LLH6 Marking 260N3LH6 Package PowerFLAT 5x6 Packing Tape and reel DS10458 - Rev 4 - February 2020 www.st.com For further information contact your local STMicroelectronics sales office.STL260N3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 30 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 260 C (1) I A D Drain current (continuous) at T = 100 C 190 C (1)(2) I Drain current (pulsed) 1040 A DM Drain current (continuous) at T = 25 C 45 A pcb (3) I D Drain current (continuous) at T = 100 C 32 A pcb (2)(3) I Drain current (pulsed) 180 A DM (1) P Total power dissipation at T = 25 C 166 W TOT C (3) P Total power dissipation at T = 25 C pcb 4.8 W TOT (4) E Single pulse avalanche energy 900 mJ AS T Storage temperature range C stg -55 to 175 T Operating junction temperature range C J 1. The value is rated according to R . thj-c 2. Pulse width limited by safe operating area. 3. The value is rated according to R . thj-pcb 4. Starting T = 25C, I = 35 A. J D Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.9 thj-case C/W (1) R Thermal resistance junction-pcb 31.3 thj-pcb 1. When mounted on an 1-inch FR-4, 2 Oz copper board, t< 10 s. DS10458 - Rev 4 page 2/17