STL225N6F7AG STMicroelectronics

STL225N6F7AG Automotive-grade N-channel 60 V, 1.2 m typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max I DS DS(on) D STL225N6F7AG 60 V 1.4 m 120 A AEC-Q101 qualified Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Wettable flank package Applications DC-DC converter for H.E.V. Figure 1: Internal schematic diagram (hybrid electric vehicle) Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging TM STL225N6F7AG 225N6F7 PowerFLAT 5x6 Tape and reel March 2017 DocID028557 Rev 3 1/15 www.st.com This is information on a product in full production. Contents STL225N6F7AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 PowerFLAT 5x6 package mechanical data ....................................... 9 4.2 Packing information ......................................................................... 12 5 Revision history ............................................................................ 14 2/15 DocID028557 Rev 3