DMC3016LNS
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features
I max Low On-Resistance
D
Device BV R max
DSS DS(ON)
T = +25C Low Input Capacitance
A
Fast Switching Speed
16m @ V = 10V 9.0A
GS
Q1 30V
Low Input/Output Leakage
20m @ V = 4.5V 8.0A
GS
Complementary Pair MOSFET
28m @ V = -10V -6.8A
GS
Q2 -30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
38m @ V = -4.5V -5.8A
GS
Halogen and Antimony Free. Green Device (Note 3)
Description
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
Case: POWERDI 3333-8 (Type UXB)
resistance (R ) and yet maintain superior switching performance,
DS(ON)
Case Material: Molded Plastic, Green Molding Compound.
making it ideal for high-efficiency power management applications.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Applications
Terminal Connections: Waiting Update
Terminal: Finish Matte Tin Annealed over Copper Leadframe.
Power Management Functions
Solderable per MIL-STD-202, Method 208
Analog Switch
Weight: 0.072 grams (Approximate)
Equivalent Circuit
POWERDI 3333-8 (Type UXB)
D1 D2
Pin 1
S1
G1
S2
G2
G1 G2
D1
D1
D2
D2
S1 S2
Bottom View
Top View N-Channel MOSFET P-Channel MOSFET
Ordering Information (Note 4)
Part Number Case Packaging
DMC3016LNS-7 POWERDI 3333-8 (Type UXB) 2000/Tape & Reel
DMC3016LNS-13 POWERDI 3333-8 (Type UXB) 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMC3016LNS
Maximum Ratings Q1 N-CHANNEL (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage 30 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C 9.0
A
Continuous Drain Current (Note 6) V = 10V I A
GS D
State 7.1
T = +70C
A
Maximum Body Diode Forward Current (Note 6) I A
S
Pulsed Drain Current (380s pulse, Duty cycle = 1%) 55 A
I
DM
Avalanche Current (L = 0.1mH) (Note 7) 22 A
I
AS
Avalanche Energy (L = 0.1mH) (Note 7) 24 mJ
E
AS
Maximum Ratings Q2 P-CHANNEL (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage -30 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C -6.8
A
Continuous Drain Current (Note 6) V = -10V I A
GS D
State -5.7
T = +70C
A
Maximum Body Diode Forward Current (Note 6) I A
S
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) -40 A
I
DM
Avalanche Current (L = 0.1mH) (Note 7) -22 A
I
AS
Avalanche Energy (L = 0.1mH) (Note 7) 24 mJ
E
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation T = +25C P 1.3 W
A D
Thermal Resistance, Junction to Ambient (Note 5) Steady State 98 C/W
R
JA
Total Power Dissipation W
T = +25C P
A D
Thermal Resistance, Junction to Ambient (Note 6) Steady State C/W
R
JA
Thermal Resistance, Junction to Case (Note 6) R 12 C/W
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
PowerDI is a registered trademark of Diodes Incorporated.
2 of 10
DMC3016LNS July 2016
Diodes Incorporated
www.diodes.com
Document number: DS38129 Rev. 2 - 2
ADVANCED INFORMATION