IPD60R460CEAUMA1 Infineon

IPD60R460CE, IPA60R460CE MOSFET DPAK PG-TO 220 FP 600V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and Drain offering the best cost down performance ratio available on the market. Pin 2, Tab Gate Features Pin 1 Extremely low losses due to very low FOM Rdson*Qg and Eoss Source Very high commutation ruggedness Pin 3 Easy to use/drive Pb-free plating, Halogen free mold compound Qualified for standard grade applications Applications PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor lighting. Please note: Note1: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Note2: *6R460CE is Full PAK marking only Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j,max R 460 m DS(on),max Id. 13.1 A Q 28 nC g.typ I 26 A D,pulse E 400V 2.5 J oss Type / Ordering Code Package Marking Related Links IPD60R460CE PG-TO 252 60S460CE / 6R460CE* see Appendix A IPA60R460CE PG-TO 220 FullPAK Final Data Sheet 1 Rev. 2.2, 2016-08-08600V CoolMOS CE Power Transistor IPD60R460CE, IPA60R460CE Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 12 Package Outlines . 13 Appendix A 15 Revision History 16 Trademarks . 16 Disclaimer 16 Final Data Sheet 2 Rev. 2.2, 2016-08-08