STD9N60M2 STMicroelectronics

STD9N60M2, STP9N60M2, STU9N60M2 Datasheet N-channel 600 V, 0.72 typ., 5.5 A, MDmesh M2 Power MOSFETs in DPAK, TO-220 and IPAK packages Features TAB TAB 3 V T R max. I P Order codes Package DS Jmax DS(on) D TOT 1 DPAK STD9N60M2 DPAK 3 2 TO-220 TAB 1 STP9N60M2 650 V 0.78 5.5 A 60 W TO-220 STU9N60M2 IPAK 3 2 IPAK 1 Extremely low gate charge Excellent output capacitance (C ) profile OSS D(2, TAB) 100% avalanche tested Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STD9N60M2 STP9N60M2 STU9N60M2 DS9553 - Rev 3 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD9N60M2, STP9N60M2, STU9N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 5.5 case I A D Drain current (continuous) at T = 100 C 3.6 case (1) I Drain current (pulsed) 22 A DM P Total power dissipation at T = 25 C 60 W TOT case (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 5.5 A, di/dt 400 A/s V < V , V = 400 V SD DS peak (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 IPAK R Thermal resistance junction-case 2.08 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb R Thermal resistance junction-ambient 62.5 100 C/W thj-amb 1. When mounted on 1 inch FR-4, 2 Oz copper board Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or non-repetitive (pulse width limited by T ) 2 A AR Jmax Single pulse avalanche energy E 105 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS9553 - Rev 3 page 2/27