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STD3NK80Z-1

STD3NK80Z-1 electronic component of STMicroelectronics
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See Product Specifications
Part No.STD3NK80Z-1
Manufacturer: STMicroelectronics
Category:MOSFET
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; I2PAK
Datasheet: STD3NK80Z-1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

19: USD 1.1872 ea
Line Total: USD 22.56

Availability - 679
Ships to you between
Thu. 30 May to Wed. 05 Jun
MOQ: 19  Multiples: 1
Pack Size: 1
Availability Price Quantity
1387 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 2.3429
10 : USD 1.8252
100 : USD 1.4618
500 : USD 1.2106
1000 : USD 0.9425
5000 : USD 0.8937

4 - WHS 2


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 4.0622
10 : USD 3.5586
30 : USD 3.2605
100 : USD 2.9585
500 : USD 2.6826
1000 : USD 2.6202

679 - WHS 3


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 19
Multiples : 1
19 : USD 1.1872
100 : USD 1.051
250 : USD 0.9873
500 : USD 0.8238
1000 : USD 0.7803
3000 : USD 0.7699
9000 : USD 0.7311

     
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 typ., 2.5 A SuperMESH Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages Datasheet - production data Features Order code V R I DS DS(on) max. D STD3NK80Z-1 800 V 4.5 2.5 A STD3NK80ZT4 800 V 4.5 2.5 A STF3NK80Z 800 V 4.5 2.5 A STP3NK80Z 800 V 4.5 2.5 A Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Zener-protected Applications Figure 1: Internal schematic diagram Switching applications Description These high voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Such series complements ST s full range of high voltage MOSFETs including the revolutionary MDmesh products. Table 1: Device summary Order code Marking Package Packaging STD3NK80Z-1 D3NK80Z IPAK Tube STD3NK80ZT4 D3NK80Z DPAK Tape and reel STF3NK80Z F3NK80Z TO-220FP Tube STP3NK80Z P3NK80Z TO-220 Tube April 2017 DocID9565 Rev 7 1/29 www.st.com This is information on a product in full production. Contents STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 IPAK (TO-251) type A package information .................................... 10 4.2 DPAK package information ............................................................. 12 4.2.1 DPAK (TO-252) type A package information ................................... 12 4.2.2 DPAK (TO-252) type C2 package information ................................. 15 4.2.3 DPAK (TO-252) type E package information ................................... 18 4.2.4 DPAK (TO-252) packing information ................................................ 20 4.3 TO-220FP package information ...................................................... 22 4.4 TO-220 package information ........................................................... 24 4.4.1 TO-220 type A package information ................................................. 24 4.4.2 TO-220 type H package information ................................................ 26 5 Revision history ............................................................................ 28 2/29 DocID9565 Rev 7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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