STD40P8F6AG STMicroelectronics

STD40P8F6AG Automotive-grade P-channel -80 V, 18.5 m typ., -40 A STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DSS DS(on) D STD40P8F6AG -80 V 28 m -40 A Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Figure 1: Internal schematic diagram Low gate drive power loss D(2, TAB) Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, G(1) with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) AM11258v1 Table 1: Device summary Order code Marking Package Packing STD40P8F6AG 40P8F6 DPAK Tape and reel July 2016 DocID029583 Rev 1 1/16 www.st.com This is information on a product in full production. Contents STD40P8F6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK type A2 package information ................................................ 10 4.2 DPAK packing information .............................................................. 13 5 Revision history ............................................................................ 15 2/16 DocID029583 Rev 1