Green
DMTH6004SPS
60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features
Rated to +175C Ideal for High Ambient Temperature
I Max
D
BV R Max Environments
DSS DS(ON) T = +25C
C
(Note 9)
100% Unclamped Inductive Switching Ensures More Reliable
And Robust End Application
60V 100A
3.1m @ V = 10V
GS
Low R Minimizes Power Losses
DS(ON)
Low Q Minimizes Switching Losses
g
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Description
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET features low on-resistance and fast
An Automotive-Compliant Part is Available Under Separate
switching, making it ideal for high efficiency power management
Datasheet (DMTH6004SPSQ)
applications.
Mechanical Data
Applications
Case: POWERDI 5060-8
DC Motor Control
Case Material: Molded Plastic, Green Molding Compound.
Synchronous Rectification
UL Flammability Classification Rating 94V-0
DC/DC Converters Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
POWERDI 5060-8
S D
Pin1
S
D
S D
D
G
Top View Top View
Bottom View Internal Schematic
Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMTH6004SPS-13 POWERDI 5060-8 2,500 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMTH6004SPS
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 60 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
T = +25C 25
A
Continuous Drain Current (Note 5) I A
D
21
T = +70C
A
T = +25C
C
100
Continuous Drain Current (Note 6) (Note 9) A
ID
100
T = +100C
C
Maximum Continuous Body Diode Forward Current (Note 6) 100 A
I
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 200 A
I
DM
Avalanche Current, L = 0.2mH 45 A
I
AS
200
Avalanche Energy, L = 0.2mH E mJ
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 2.1 W
T = +25C P
A D
Thermal Resistance, Junction to Ambient (Note 5) 47 C/W
R
JA
Total Power Dissipation (Note 6) T = +25C P 167 W
C D
Thermal Resistance, Junction to Case (Note 6) R 0.9 C/W
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage 60 V
BV V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 48V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 2 4 V
V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance R 2.5 3.1 m V = 10V, I = 50A
DS(ON) GS D
Diode Forward Voltage V 0.9 1.2 V V = 0V, I = 20A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C 4556
iss
V = 30V, V = 0V,
DS GS
1383
Output Capacitance C pF
oss
f = 1MHz
105.2
Reverse Transfer Capacitance
Crss
0.66
Gate Resistance
R V = 0V, V = 0V, f = 1MHz
g DS GS
Total Gate Charge 95.4
Q
g
V = 30V, I = 90A,
DD D
Gate-Source Charge 21.6 nC
Q
gs
V = 10V
GS
Gate-Drain Charge 20.4
Q
gd
Turn-On Delay Time 13.2
t
D(ON)
11.7
Turn-On Rise Time t V = 30V, V = 10V,
R DD GS
ns
31
Turn-Off Delay Time t I = 90A, R = 3.5
D(OFF) D G
12
Turn-Off Fall Time t
F
50.5
Body Diode Reverse Recovery Time t ns
RR
I = 50A, di/dt = 100A/s
F
80.8
Body Diode Reverse Recovery Charge Q nC
RR
Notes: 5. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB; device is measured under still air conditions
whilst operating in a steady state.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
2 of 7
DMTH6004SPS November 2015
Diodes Incorporated
www.diodes.com
Document number: DS37353 Rev. 5 - 2
ADAVDAVNACNECDE DIN IFNOFROMRMATAITOINO N