STD46N6F7 STMicroelectronics

STD46N6F7 N-channel 60 V, 0.012 typ., 15 A STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. DS DS(on) ID STD46N6F7 60 V 0.014 15 A Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Figure 1: Internal schematic diagram Applications Switching applications D(2, TAB) Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- G(1) state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(3) AM01475v1 Tab Table 1: Device summary Order code Marking Package Packaging STD46N6F7 46N6F7 DPAK Tape and reel January 2016 DocID028323 Rev 2 1/14 www.st.com This is information on a product in full production. Contents STD46N6F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ..................................................................................... 7 4 Package information ....................................................................... 8 4.1 DPAK(TO-252) type A package information ..................................... 8 4.2 Packing information ......................................................................... 11 5 Revision history ............................................................................ 13 2/14 DocID028323 Rev 2