DMN2050LFDB
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
Low On-Resistance
I max
D
V R max
(BR)DSS DS(ON) Low Input Capacitance
T = +25C
A
Fast Switching Speed
45m @ V = 4.5V 4.5A
GS Low Input/Output Leakage
20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
55m @ V = 2.5V 4.1A
GS Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
Case: U-DFN2020-6 Type B
(R ) and yet maintain superior switching performance, making it
DS(on) Case Material: Molded Plastic, Green Molding Compound. UL
ideal for high efficiency power management applications.
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe. Solderable
Applications
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
D1 D2
S2
G2
D2
D1
D1
G1 G2
D2
G1
S1
S1 S2
Pin1
Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMN2050LFDB -7 DFN2020-6 Type B 3,000/Tape & Reel
DMN2050LFDB -13 DFN2020-6 Type B 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN2050LFDB
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 20 V
DSS
Gate-Source Voltage V 12 V
GSS
T = +25C
Steady A 3.3
A
Continuous Drain Current (Note 5) V = 4.5V I
GS D
State 2.6
T = +70C
A
Steady T = +25C 4.5
A
Continuous Drain Current (Note 6) V = 4.5V I A
GS D
State 3.6
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 6) I 1 A
S
Pulsed Drain Current (10 s pulse, duty cycle = 1%) I 25 A
DM
Avalanche Current (Note 7) L = 0.1mH I 9 A
AR
Repetitive Avalanche Energy (Note 7) L = 0.1mH 4.5 mJ
E
AR
Thermal Characteristics
Characteristic Symbol Value Units
0.73
T = +25C
A
Total Power Dissipation (Note 5) W
P
D
T = +70C 0.46
A
Steady state 173
Thermal Resistance, Junction to Ambient (Note 5) R C/W
JA
t<10s 110
T = +25C 1.42
A
Total Power Dissipation (Note 6) P W
D
T = +70C 0.90
A
Steady state 89
Thermal Resistance, Junction to Ambient (Note 6) R
JA
t<10s 57
C/W
Thermal Resistance, Junction to Case (Note 6) R 18
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250 A
DSS GS D
1.0 A
Zero Gate Voltage Drain Current T = +25C I V = 16V, V = 0V
J DSS DS GS
Gate-Source Leakage 100 nA
I V = 12V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage 0.4 1.0 V
V V = V , I = 250 A
GS(th) DS GS D
28 45
V = 4.5V, I = 5.0A
GS D
Static Drain-Source On-Resistance R m
DS (ON)
36 55
V = 2.5V, I = 4.2A
GS D
Forward Transfer Admittance |Y | 9 S V = 5V, I = 5A
fs DS D
Diode Forward Voltage V 0.75 1.0 V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
389
Input Capacitance C pF
iss
V = 10V, V = 0V,
DS GS
72
Output Capacitance C pF
oss
f = 1.0MHz
63
Reverse Transfer Capacitance C pF
rss
2.1
Gate Resistance R V = 0V, V = 0V, f = 1MHz
g DS GS
Total Gate Charge (V = 4.5V) Q 5.7 nC
GS g
12 nC
Total Gate Charge (V = 10V) Q
GS g
V = 15V, I = 5.8A
DS D
Gate-Source Charge 0.7 nC
Q
gs
Gate-Drain Charge 1.5 nC
Q
gd
5
Turn-On Delay Time t ns
D(on)
8
Turn-On Rise Time t ns V = 10V, V = 4.5V,
r DS GS
25
Turn-Off Delay Time t ns R = 6 , I = 1A
D(off) G DS
8
Turn-Off Fall Time t ns
f
Reverse Recovery Time t 8.5 ns
rr
I = 5A, di/dt = 100A/s
F
Reverse Recovery Charge Q 2.1 nC
rr
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I and E rating are based on low frequency and duty cycles to keep T = +25C
AR AR J
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 6 September 2013
DMN2050LFDB
Diodes Incorporated
www.diodes.com
Document number: DS36473 Rev. 2 - 2