X-On Electronics has gained recognition as a prominent supplier of STWA68N60M6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STWA68N60M6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STWA68N60M6 STMicroelectronics

STWA68N60M6 electronic component of STMicroelectronics
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Part No.STWA68N60M6
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET PTD HIGH VOLTAGE
Datasheet: STWA68N60M6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 15.0539 ea
Line Total: USD 15.05 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 600
Multiples : 1
600 : USD 9.6768
1000 : USD 9.6239
2000 : USD 9.571
2500 : USD 9.5168
3000 : USD 9.4626
4000 : USD 9.4084
5000 : USD 9.353
10000 : USD 9.2963
20000 : USD 9.2408
50000 : USD 9.1829

0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 15.0539
5 : USD 12.6863
10 : USD 10.5078
50 : USD 9.513
100 : USD 9.3634
250 : USD 9.2137

0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 13.9387
10 : USD 12.0852
25 : USD 11.5236
100 : USD 10.0116
600 : USD 8.7156
1200 : USD 8.1648

0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 13.732
2 : USD 8.9964
3 : USD 8.9829
5 : USD 8.4944

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the STWA68N60M6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STWA68N60M6 and other electronic components in the MOSFETs category and beyond.

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STWA68N60M6 Datasheet N-channel 600 V, 35 m typ., 63 A MDmesh M6 Power MOSFET in a TO-247 long leads package Features V R max. I Order code DS DS(on) D STWA68N60M6 600 V 41 m 63 A Reduced switching losses Lower R per area vs previous generation DS(on) Low gate input resistance 100% avalanche tested Zener-protected D(2, TAB) Applications Switching applications G(1) LLC converters Boost PFC converters S(3) AM01475V1 Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with DS(on) one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Maturity status link STWA68N60M6 Device summary Order code STWA68N60M6 Marking 68N60M6 Package TO-247 long leads Packing Tube DS12067 - Rev 2 - November 2018 www.st.com/Power Transistors For further information contact your local STMicroelectronics sales office.STWA68N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 63 A C I D Drain current (continuous) at T = 100 C 40 A C (1) I Drain current (pulsed) 252 A DM P Total power dissipation at T = 25 C 390 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 100 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 63 A, di/dt 400 A/s, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.32 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 7.5 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 1100 mJ AS j D AR DD DS12067 - Rev 2 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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