STD45NF75T4 Datasheet Automotive-grade N-channel 75 V, 18 m, 40 A, STripFET II Power MOSFET in a DPAK package Features V R max. I Type TAB DS DS(on) D STD45NF75T4 75 V 24 m 40 A 3 2 1 DPAK AEC-Q101 qualified Exceptional dv/dt capability D(2, TAB) 100% avalanche tested Low gate charge Applications G(1) Switching applications Description S(3) AM01475v1 noZen This Power MOSFET series has been developed using STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STD45NF75T4 Product summary Order code STD45NF75T4 Marking D45NF75 Package DPAK Packing Tape and reel DS3559 - Rev 6 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD45NF75T4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 75 V DS V Gate-source voltage 20 V GS (1) Drain current (continuous) at T = 25 C A 40 C I D Drain current (continuous) at T = 100 C 30 A C (2) I Drain current (pulsed) 160 A DM P Total dissipation at T = 25 C 125 W TOT C (3) E Single-pulse avalanche energy 500 mJ AS (4) dv/dt Peak diode recovery voltage slope 20 V/ns T Storage temperature range stg -55 to 175 C T Operating junction temperature range j 1. This value is limited by package. 2. Pulse width is limited by safe operating area. 3. Starting T = 25 C, I = 20 A, V = 40 V J D DD 4. I 40 A, di/dt 800 A/s, V V , T T SD DD (BR)DSS J JMAX Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.2 C/W thj-case (1) R 50 C/W thj-pcb Thermal resistance junction-pcb 1. When mounted on an 1-inch FR-4, 2 Oz copper board. DS3559 - Rev 6 page 2/16