STD40P3LLH6 STMicroelectronics

STD40P3LLH6 P-channel -30 V, 12 m typ., -40 A STripFET H6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max I DS DS(on) D STD40P3LLH6 -30 V 15 m -40 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications Switching applications D(2, TAB) Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) G(1) packages. S(3) AM11258v1 Table 1: Device summary Order code Marking Package Packing STD40P3LLH6 40P3LLH6 DPAK Tape and reel March 2016 DocID025821 Rev 4 1/16 www.st.com This is information on a product in full production. Contents STD40P3LLH6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO252) type A2 mechanical data ........................................ 10 4.2 DPAK (TO252) packing information ................................................ 13 5 Revision history ............................................................................ 15 2/16 DocID025821 Rev 4