DATA SHEET www.onsemi.com MOSFET Power 170 mAMPS 170 mAmps, 100 Volts 100 VOLTS NChannel SOT23 R = 6 DS(on) NChannel BSS123LT1G, 3 BVSS123LT1G Features BVSS Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant 2 MARKING DIAGRAM MAXIMUM RATINGS & PIN ASSIGNMENT Rating Symbol Value Unit Drain 3 DrainSource Voltage V 100 Vdc DSS 3 GateSource Voltage 1 Continuous V 20 Vdc GS SA M 2 Nonrepetitive (t 50 s) V 40 Vpk GSM p SOT23 Drain Current Adc CASE 318 Continuous (Note 1) I 0.17 1 2 D STYLE 21 Pulsed (Note 2) I 0.68 Gate Source DM Stresses exceeding those listed in the Maximum Ratings table may damage the SA = Device Code device. If any of these limits are exceeded, device functionality should not be M = Date Code assumed, damage may occur and reliability may be affected. = PbFree Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS *Date Code orientation and/or position may Characteristic Symbol Max Unit vary depending upon manufacturing location. Total Device Dissipation FR5 Board (Note 3) T = 25C P 225 mW A D ORDERING INFORMATION Derate above 25C 1.8 mW/C See detailed ordering and shipping information in the package Thermal Resistance, R 556 C/W JA dimensions section on page 2 of this data sheet. JunctiontoAmbient Junction and Storage Temperature T , T 55 to +150 C J stg 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Width 300 s, Duty Cycle 2.0%. 3. FR5 = 1.0 0.75 0.062 in. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: November, 2021 Rev. 12 BSS123LT1/DBSS123LT1G, BVSS123LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage V 100 Vdc (BR)DSS (V = 0, I = 250 Adc) GS D Zero Gate Voltage Drain Current I Adc DSS (V = 0, V = 100 Vdc) T = 25C 15 GS DS J T = 125C 60 J GateBody Leakage Current I 50 nAdc GSS (V = 20 Vdc, V = 0) GS DS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V 1.6 2.6 Vdc GS(th) (V = V , I = 1.0 mAdc) DS GS D Static DrainSource OnResistance r 6.0 DS(on) (V = 10 Vdc, I = 100 mAdc) GS D Forward Transconductance g 80 mmhos fs (V = 25 Vdc, I = 100 mAdc) DS D DYNAMIC CHARACTERISTICS Input Capacitance C 20 pF iss (V = 25 Vdc, V = 0, f = 1.0 MHz) DS GS Output Capacitance C 9.0 pF oss (V = 25 Vdc, V = 0, f = 1.0 MHz) DS GS Reverse Transfer Capacitance C 4.0 pF rss (V = 25 Vdc, V = 0, f = 1.0 MHz) DS GS (4) SWITCHING CHARACTERISTICS TurnOn Delay Time t 20 ns d(on) (V = 30 Vdc, I = 0.28 Adc, CC C V = 10 Vdc, R = 50 ) GS GS TurnOff Delay Time t 40 ns d(off) REVERSE DIODE Diode Forward OnVoltage V 1.3 V SD (I = 0.34 Adc, V = 0 Vdc) D GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Package Shipping BSS123LT1G SOT23 3,000 / Tape & Reel (PbFree) BVSS123LT1G* SOT23 3,000 / Tape & Reel (PbFree) BSS123LT7G SOT23 3,500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable. www.onsemi.com 2