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This literature is subject to all applicable copyright laws and is not for resale in any manner.BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2015 BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor Features Description 0.17 A, 100 V, R = 6 at V = 10 V DS(ON) GS This N-channel enhancement mode field effect transistor R = 10 at V = 4.5 V DS(ON) GS is produced using high cell density, trench MOSFET High Density Cell Design for Low R technology. This product minimizes on-state resistance DS(ON) while providing rugged, reliable and fast switching perfor- Rugged and Reliable mance. This product is particularly suited for low-voltage, Ultra Small Surface Mount Package low-current applications such as small servo motor con- Very Low Capacitance trol, power MOSFET gate drivers, logic level transistor, Fast Switching Speed high speed line drivers, power management/power sup- Lead Free / RoHS Compliant ply and switching applications. D D S SOT-323 G G S Ordering Information Part Number Marking Package Packing Method BSS123W SA SOT-323 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Drain-Source Voltage 100 V DSS V Drain-Gate Voltage R 20 k 100 V DGR GS V Gate-Source Voltage 20 V GSS Continuous 0.17 I Drain Current A D Pulsed 0.68 T , T Operating and Storage Temperature Range -55 to +150 C J STG 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com BSS123W Rev. 1.0