X-On Electronics has gained recognition as a prominent supplier of BSS123W MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS123W MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS123W ON Semiconductor

BSS123W electronic component of ON Semiconductor
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See Product Specifications
Part No.BSS123W
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 100V NCH ENHANCEMENT MODE TRANSISTOR
Datasheet: BSS123W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.074 ea
Line Total: USD 222 
Availability - 5820
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
1
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 0.0767

5820
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.074

23
Ship by Wed. 27 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7084
10 : USD 0.6901
30 : USD 0.6771
100 : USD 0.6641

2633
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 5
Multiples : 5
5 : USD 0.2063
25 : USD 0.1384
100 : USD 0.1221
160 : USD 0.1072
435 : USD 0.1017

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Package Case
Series
Transistor Type
Brand
Forward Transconductance Min
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Rds On Drain Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Typical Turn On Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
Height
Length
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the BSS123W from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS123W and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2015 BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor Features Description 0.17 A, 100 V, R = 6 at V = 10 V DS(ON) GS This N-channel enhancement mode field effect transistor R = 10 at V = 4.5 V DS(ON) GS is produced using high cell density, trench MOSFET High Density Cell Design for Low R technology. This product minimizes on-state resistance DS(ON) while providing rugged, reliable and fast switching perfor- Rugged and Reliable mance. This product is particularly suited for low-voltage, Ultra Small Surface Mount Package low-current applications such as small servo motor con- Very Low Capacitance trol, power MOSFET gate drivers, logic level transistor, Fast Switching Speed high speed line drivers, power management/power sup- Lead Free / RoHS Compliant ply and switching applications. D D S SOT-323 G G S Ordering Information Part Number Marking Package Packing Method BSS123W SA SOT-323 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Drain-Source Voltage 100 V DSS V Drain-Gate Voltage R 20 k 100 V DGR GS V Gate-Source Voltage 20 V GSS Continuous 0.17 I Drain Current A D Pulsed 0.68 T , T Operating and Storage Temperature Range -55 to +150 C J STG 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com BSS123W Rev. 1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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