BSS123WQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I D Low Gate Threshold Voltage V R (BR)DSS DS(ON) T = +25C A Low Input Capacitance 100V 6.0 V = 10V 170mA GS Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Description Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to minimize the on-state Qualified to AEC-Q101 Standards for High Reliability resistance (R ) and yet maintain superior switching performance, DS(ON) PPAP Capable (Note 4) making it ideal for high efficiency power management applications. Applications Mechanical Data Small Servo Motor Control Case: SOT323 Power MOSFET Gate Drivers Case Material: Molded Plastic,Gree Molding Compound, Switching Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Matte Tin Finish annealed over Alloy 42 Leadframe e3 (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (approximate) D SOT323 D G G S S Top View Equivalent Circuit Top View Ordering Information (Notes 4 & 5) Part Number Compliance Case Packaging BSS123WQ-7-F Automotive SOT323 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BSS123WQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 100 V DSS Drain-Gate Voltage R 20K V 100 V GS DGR Gate-Source Voltage Continuous V V 20 GSS Drain Current (Note 6) Continuous I 170 D mA Pulsed 680 I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 200 mW D Thermal Resistance, Junction to Ambient (Note 6) R 625 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 100 V V = 0V, I = 250A DSS GS D 1.0 A V = 100V, V = 0V DS GS Zero Gate Voltage Drain Current I DSS 10 nA V = 20V, V = 0V DS GS Gate-Body Leakage, Forward I 50 nA V = 20V, V = 0V GSSF GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.8 1.4 2.0 V V V = V , I = 1mA GS(th) DS GS D 6.0 V = 10V, I = 0.17A GS D Static Drain-Source On-Resistance R DS(ON) 10 V = 4.5V, I = 0.17A GS D Forward Transconductance 80 370 mS g V = 10V, I = 0.17A, f = 1.0KHz FS DS D Drain-Source Diode Forward Voltage 0.84 1.3 V V V = 0V, I = 0.34A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 29 60 pF iss Output Capacitance C 10 15 pF V = 25V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance 2 6 pF C rss SWITCHING CHARACTERISTICS(Note 8) Turn-On Rise Time t 8 ns r Turn-Off Fall Time t 16 ns f V = 30V, I = 0.28A, DD D R = 6.0, V = 10V Turn-On Delay Time t 8 ns GEN GS D(ON) Turn-Off Delay Time t 13 ns D(OFF) Notes: 6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at