BSS138N SIPMOS Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R 3.5 DS(on),max Enhancement mode I 0.23 A D Logic level dv /dt rated Pb-free lead-plating RoHS compliant PG-SOT-23 Qualified according to AEC Q101 Halogen free according to IEC61249-2-21 Type Package Tape and Reel Marking BSS138N PG-SOT-23 H6327: 3000 SKs BSS138N PG-SOT-23 H6433: 10000 SKs Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 0.23 A D A T =70 C 0.18 A Pulsed drain current I T =25 C 0.92 D,pulse A I =0.23 A, V =48 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max Gate source voltage V 20 V GS ESD sensitivity JESD22-A114 (HBM) Class 0 (<250V) P T =25 C Power dissipation 0.36 W tot A Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Rev. 2.86Rev. 2.86 page 1page 1 2012-04-172012-04-17BSS138N Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 350 K/W thJA junction - minimal footprint Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V = 0 V, I =250 A Drain-source breakdown voltage 60 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =26 A 0.6 1.0 1.4 GS(th) GS DS D V =60 V, DS Drain-source leakage current I - - 0.1 A D (off) V =0 V, T =25 C GS j V =60 V, DS -- 5 V =0 V, T =150 C GS j I V =20 V, V =0 V Gate-source leakage current - 1 10 nA GSS GS DS Drain-source on-state resistance R V =4.5 V, I =0.03 A - 3.3 4.0 DS(on) GS D V =4.5 V, I =0.19 A - 3.5 6.0 GS D V =10 V, I =0.23 A - 2.2 3.5 GS D V >2 I R , DS D DS(on)max Transconductance g 0.1 0.2 - S fs I =0.18 A D Rev. 2.86Rev. 2.86 page 2page 2 2012-04-172012-04-17