BSS126 SIPMOS Small-Signal-Transistor Product Summary Features V 600 V DS N-channel R 700 DS(on),max Depletion mode I 0.007 A DSS,min dv /dt rated PG-SOT-23 Available with V indicator on reel GS(th) Pb-free lead plating RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Pb-free Tape and Reel Information Marking BSS126BSS126 PPGG-S-SOTOT-2-233 YeYess H6327: 3000 pcH6327: 3000 pcss//rreeleel SHsSHs 1)1) BSS126BSS126 PPGG-S-SOTOT-2-233 YeYess H6906: 3000 pcH6906: 3000 pcss//rreel seel soorrtted in ed in VV bandsbands SHsSHs GSGS(th(th)) Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C 0.021 A D A T =70 C 0.017 A I T =25 C Pulsed drain current 0.085 D,pulse A I =0.016 A, D V =20 V, DS Reverse diode dv /dt dv /dt 6 kV/s di /dt =200 A/s, T =150 C j,max Gate source voltage V 20 V GS ESD sensitivity (HBM) as per Class0 (0 >250 V) JESD22-A114 P T =25 C Power dissipation 0.50 W tot A Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 2.1Rev. 2.1 page 1page 1 2012-03-142012-03-14BSS126 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R minimal footprint - - 250 K/W thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =-5 V, I =250 A Drain-source breakdown voltage 600 - - V (BR)DSS GS D Gate threshold voltage V V =3 V, I =8 A -2.7 -2.0 -1.6 GS(th) DS D V =600 V, DS Drain-source cutoff current I - - 0.1 A D(off) V =-5 V, T =25 C GS j V =600 V, DS -- 10 V =-5 V, T =125 C GS j Gate-source leakage current I V =20 V, V =0 V - - 100 nA GSS GS DS V =0 V, V =25 V On-state drain current I 7- - mA DSS GS DS R V =0 V, I =3 mA Drain-source on-state resistance - 320 700 DS(on) GS D V =10 V, I =16 mA - 280 500 GS D V >2 I R , DS D DS(on)max g Transconductance 0.008 0.017 - S fs I =0.01 A D 2) Threshold voltage V sorted in bands GS(th) V V =3 V, I =8 A J -1.8 - -1.6 V GS(th) DS D K -1.95--1.75 L -2.1--1.9 M -2.25--2.05 N -2.4--2.2 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 2.1Rev. 2.1 page 2page 2 2012-03-142012-03-14