X-On Electronics has gained recognition as a prominent supplier of BSS126 H6327 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS126 H6327 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS126 H6327 Infineon

BSS126 H6327 electronic component of Infineon
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See Product Specifications
Part No.BSS126 H6327
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-KANAL SMALL SIGNAL MOS
Datasheet: BSS126 H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2134 ea
Line Total: USD 1.07 
Availability - 3078
Ship by Wed. 27 Nov to Mon. 02 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
482
Ship by Wed. 27 Nov to Mon. 02 Dec
MOQ : 497
Multiples : 1
497 : USD 0.1454

3078
Ship by Wed. 27 Nov to Mon. 02 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2134
50 : USD 0.1752
150 : USD 0.1589
500 : USD 0.1385
3000 : USD 0.1113
6000 : USD 0.1057

12770
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3857
10 : USD 0.3321
100 : USD 0.2519
500 : USD 0.2029
1000 : USD 0.1616
3000 : USD 0.1494
9000 : USD 0.136
24000 : USD 0.1337
45000 : USD 0.1304

5170
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 313
Multiples : 1
313 : USD 0.326
500 : USD 0.3142
1000 : USD 0.3041
2500 : USD 0.295
5000 : USD 0.287

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Package Case
Series
Brand
Continuous Drain Current
Drain Source Breakdown Voltage
Gate Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Rohs Mouser
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS126 H6327 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS126 H6327 and other electronic components in the MOSFETs category and beyond.

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BSS126 SIPMOS Small-Signal-Transistor Product Summary Features V 600 V DS N-channel R 700 DS(on),max Depletion mode I 0.007 A DSS,min dv /dt rated PG-SOT-23 Available with V indicator on reel GS(th) Pb-free lead plating RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Pb-free Tape and Reel Information Marking BSS126BSS126 PPGG-S-SOTOT-2-233 YeYess H6327: 3000 pcH6327: 3000 pcss//rreeleel SHsSHs 1)1) BSS126BSS126 PPGG-S-SOTOT-2-233 YeYess H6906: 3000 pcH6906: 3000 pcss//rreel seel soorrtted in ed in VV bandsbands SHsSHs GSGS(th(th)) Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C 0.021 A D A T =70 C 0.017 A I T =25 C Pulsed drain current 0.085 D,pulse A I =0.016 A, D V =20 V, DS Reverse diode dv /dt dv /dt 6 kV/s di /dt =200 A/s, T =150 C j,max Gate source voltage V 20 V GS ESD sensitivity (HBM) as per Class0 (0 >250 V) JESD22-A114 P T =25 C Power dissipation 0.50 W tot A Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 2.1Rev. 2.1 page 1page 1 2012-03-142012-03-14BSS126 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R minimal footprint - - 250 K/W thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =-5 V, I =250 A Drain-source breakdown voltage 600 - - V (BR)DSS GS D Gate threshold voltage V V =3 V, I =8 A -2.7 -2.0 -1.6 GS(th) DS D V =600 V, DS Drain-source cutoff current I - - 0.1 A D(off) V =-5 V, T =25 C GS j V =600 V, DS -- 10 V =-5 V, T =125 C GS j Gate-source leakage current I V =20 V, V =0 V - - 100 nA GSS GS DS V =0 V, V =25 V On-state drain current I 7- - mA DSS GS DS R V =0 V, I =3 mA Drain-source on-state resistance - 320 700 DS(on) GS D V =10 V, I =16 mA - 280 500 GS D V >2 I R , DS D DS(on)max g Transconductance 0.008 0.017 - S fs I =0.01 A D 2) Threshold voltage V sorted in bands GS(th) V V =3 V, I =8 A J -1.8 - -1.6 V GS(th) DS D K -1.95--1.75 L -2.1--1.9 M -2.25--2.05 N -2.4--2.2 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 2.1Rev. 2.1 page 2page 2 2012-03-142012-03-14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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