X-On Electronics has gained recognition as a prominent supplier of BSS159NH6906XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS159NH6906XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS159NH6906XTSA1 Infineon

BSS159NH6906XTSA1 electronic component of Infineon
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Part No.BSS159NH6906XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23 T/R
Datasheet: BSS159NH6906XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0932 ea
Line Total: USD 279.6 
Availability - 29100
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
41806
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2972
10 : USD 0.2838
25 : USD 0.2835
100 : USD 0.2662
250 : USD 0.2657
500 : USD 0.2522
1000 : USD 0.2511
3000 : USD 0.2499
6000 : USD 0.2485
15000 : USD 0.2474
30000 : USD 0.2462

32
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5317
10 : USD 0.5163
30 : USD 0.5069
100 : USD 0.4974

41261
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3586
10 : USD 0.3509
100 : USD 0.3036
500 : USD 0.2706
1000 : USD 0.2563
3000 : USD 0.2541
6000 : USD 0.2431
24000 : USD 0.2387

41806
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 32
Multiples : 1
32 : USD 0.2462

436500
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 45000
Multiples : 45000
45000 : USD 0.3093

29100
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0932

25642
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1435
Multiples : 1
1435 : USD 0.3399

40740
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1435
Multiples : 1
1435 : USD 0.3399

   
Manufacturer
Product Category
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Channel Mode
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Gate Source Voltage Max
Polarity
Drain Source On Volt
Number Of Elements
Power Dissipation
Mounting
Pin Count
Continuous Drain Current
Package Type
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We are delighted to provide the BSS159NH6906XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS159NH6906XTSA1 and other electronic components in the MOSFETs category and beyond.

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BSS159N SIPMOS Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R 8 DS(on),max Depletion mode I 0.13 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Qualified according to AEC Q101 PG-SOT-23 100% lead-free Halogen-free RoHS compliant 3 1 2 Type Package Pb-free Halogen-free Tape and Reel Information Marking BSS159N PG-SOT-23 Yes Yes H6327: 3000 pcs/reel SGs BSS159NBSS159N PPGG-S-SOTOT-2-233 YeYess YeYess H6906: 3000 pcH6906: 3000 pcss//rreel seel soorrtted in ed in SGSGss 1)1) VV bandsbands GSGS(th(th)) Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C 0.23 A D A T =70 C 0.18 A I T =25 C Pulsed drain current 0.92 D,pulse A I =0.23 A, V =60 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max V Gate source voltage 20 V GS ESD Class JESD22-A114 -HBM 0(<250V) P T =25 C Power dissipation 0.36 W tot A Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 2.2 page 1 2009-07-29BSS159N Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R minimal footprint - - 350 K/W Thermal characteristics thJA Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =-10 V, I =250 A Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =3 V, I =26 A Gate threshold voltage -3.5 -2.8 -2.4 GS(th) DS D V =60 V, DS I Drain-source cutoff current - - 0.1 A D(off) V =-10 V, T =25 C GS j V =60 V, DS -- 10 V =-10 V, T =125 C GS j II VV =20 V, 20 V VV =0 V0V GtGate-source leakage currentl k t - - 1010 nAA GSS GS DS I V =0 V, V =10 V On-state drain current 130 - - mA DSS GS DS Drain-source on-state resistance R V =0 V, I =0.07 A - 3.9 8 DS(on) GS D V =10 V, I =0.16 A - 1.7 3.5 GS D V >2 I R , DS D DS(on)max Transconductance g 0.1 0.19 - S fs I =0.16 A D 2) Threshold voltage V sorted in bands GS(th) V V =3 V, I =26 A J -2.6 - -2.4 V GS(th) DS D K -2.75--2.55 L -2.9--2.7 M -3.05--2.85 N -3.2--3 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 2.2Rev. 2.2 page 2page 2 2009-07-292009-07-29

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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