DMP1055UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Low On-Resistance
I
D MAX
V R
(BR)DSS DS(ON) max Low Input Capacitance
T = +25C
A
Low Profile, 0.6mm Max Height
59m @ V = -4.5V -3.9A
GS
ESD protected gate.
-12V -3.3A
81m @ V = -2.5V
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
115m @ V = -1.8V -2.8A
GS
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description Mechanical Data
This MOSFET has been designed to minimize the on-state resistance Case: U-DFN2020-6 Type B
(R ) and yet maintain superior switching performance, making it
DS(on) Case Material: Molded Plastic, Green Molding Compound.
ideal for high efficiency power management applications.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe. Solderable per
Applications
e4
MIL-STD-202, Method 208
Load Switch Terminals Connections: See Diagram Below
Weight: 0.0065 grams (approximate)
Power Management Functions
Portable Power Adaptors
U-DFN2020-6
Type B
D1 D2
S2
G2
D2
D1
G1 G2
D1
D2
G1
Gate Protection
Gate Protection
S1
ESD PROTECTED
S1
S2
Diode Diode
Pin1
Q2 P-CHANNEL
Q1 P-CHANNEL
Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMP1055UFDB -7 U-DFN2020-6 Type B 3000/Tape & Reel
DMP1055UFDB -13 U-DFN2020-6 Type B 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMP1055UFDB
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage -12 V
V
DSS
Gate-Source Voltage 8 V
V
GSS
Steady T = +25C -3.9
A
I A
D
State -3.1
T = +70C
A
Continuous Drain Current (Note 5) V = -4.5V
GS
T = +25C
A -5.0
t < 5s A
I
D
-4.0
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 5) -1.7 A
I
S
Pulsed Drain Current (10 s pulse, duty cycle = 1%) I -25 A
DM
Thermal Characteristics
Characteristic Symbol Value Units
Steady State 1.36
Total Power Dissipation (Note 5) W
P
D
t < 5s 1.89
Steady State 92
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
t < 5s 66
C/W
Thermal Resistance, Junction to Case (Note 5) R 18
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage -12 V
BV V = 0V, I = -250A
DSS GS D
Zero Gate Voltage Drain Current T = +25C -1.0 A
J I V = -12V, V = 0V
DSS DS GS
Gate-Source Leakage 10 A
I V = 8V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage -0.4 -1 V
V V = V , I = -250A
GS(th) DS GS D
37 59
V = -4.5V, I = -3.6A
GS D
48 81 V = -2.5V, I = -3.1A
GS D
Static Drain-Source On-Resistance m
R
DS (ON)
69 115 V = -1.8V, I = -2.6A
GS D
88 215 V = -1.5V, I = -0.5A
GS D
Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -3.7A
SD GS S
DYNAMIC CHARACTERISTICS (Note 7)
1028
Input Capacitance C pF
iss
V = -6V, V = 0V,
DS GS
285
Output Capacitance C pF
oss
f = 1.0MHz
Reverse Transfer Capacitance C 254 pF
rss
Gate Resistance 19.6
R V = 0V, V = 0V, f = 1MHz
g DS GS
13 nC
Total Gate Charge (V = -4.5V)
GS
Q
g
20.8 nC
Total Gate Charge (V = -8V)
GS
V = -10V, I = -4.7A
DS D
1.8
Gate-Source Charge Q nC
gs
4.5
Gate-Drain Charge Q nC
gd
5.6
Turn-On Delay Time t ns
D(on)
12.8
Turn-On Rise Time t ns
r V = -6V, V = -4.5V,
DD GS
30.7
Turn-Off Delay Time t ns R = 1.6, R = 1
D(off) L G
25.4
Turn-Off Fall Time t ns
f
Body Diode Reverse Recovery Time trr 31.6 nS I = -3.6A, dI/dt = 100A/s
S
Body Diode Reverse Recovery Charge Qrr 7.8 nC
I = -3.6A, dI/dt = 100A/s
S
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
2 of 6 April 2014
DMP1055UFDB
Diodes Incorporated
www.diodes.com
Document number: DS36934 Rev.1 - 2