STD30N6LF6AG STMicroelectronics

STD30N6LF6AG Automotive-grade N-channel 60 V, 19 m typ., 24 A STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STD30N6LF6AG 60 V 25 m 24 A 40 W Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Figure 1: Internal schematic diagram Low gate drive power loss Applications D(2, TAB) Switching applications Description This device is an N-channel Power MOSFET G(1) developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. S(3) AM01475v1 Tab Table 1: Device summary Order code Marking Package Packing STD30N6LF6AG 30N6LF6 DPAK Tape and Reel June 2015 DocID028036 Rev 1 1/15 www.st.com This is information on a product in full production. Contents STD30N6LF6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A package information..................................... 9 4.2 DPAK (TO-252) packing information ............................................... 12 5 Revision history ............................................................................ 14 2/15 DocID028036 Rev 1