STD10PF06T4 STMicroelectronics

STD10PF06 P-CHANNEL 60V - 0.18 - 10A IPAK/DPAK STripFET II POWER MOSFET TYPE V R I DSS DS(on) D STD10PF06 60 V < 0.20 10 A TYPICAL R (on) = 0.18 DS EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 LOW GATE CHARGE 2 1 APPLICATION ORIENTED 1 CHARACTERIZATION IPAK DPAK THROUGH-HOLE IPAK (TO-251) POWER TO-251 TO-252 PACKAGE IN TUBE (SUFFIX -1 ) (Suffix -1) (Suffix T4) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 ) INTERNAL SCHEMATIC DIAGRAM DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis uniqueSingle Feature Siz strip- based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS MOTOR CONTROL DC-DC & DC-AC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 60 V DS GS V Drain-gate Voltage (R = 20 k) 60 V DGR GS V GS Gate- source Voltage 20 V I Drain Current (continuous) at T = 25C 10 A D C I Drain Current (continuous) at T = 100C 7A D C I ) Drain Current (pulsed) 40 A DM( P Total Dissipation at T = 25C 40 W tot C Derating Factor 0.27 W/C (1) dv/dt Peak Diode Recovery voltage slope 6 V/ns T Storage Temperature -65 to 175 C stg T Max. Operating Junction Temperature 175 C j ) Pulse width limited by safe operating area. (1) I 10A, di/dt 300A/s, V V , T T ( SD DD (BR)DSS j JMAX Note: P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed March 2002 1/9 .STD10PF06 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 3.75 C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 C/W T Maximum Lead Temperature For Soldering Purpose 275 C l AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit Avalanche Current, Repetitive or Not-Repetitive I AR 10 A (pulse width limited by T max) j Single Pulse Avalanche Energy E AS 125 mJ (starting T = 25 C, I = I , V = 25 V) j D AR DD ELECTRICAL CHARACTERISTICS (T = 25 C UNLESS OTHERWISE SPECIFIED) CASE OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit I = 250 A, V = 0 V Drain-source 60 V D GS (BR)DSS Breakdown Voltage Zero Gate Voltage V = Max Rating I DS 1 A DSS Drain Current (V = 0) GS V = Max Rating T = 125C 10 A DS C Gate-body Leakage V = 20V I GS 1 A GSS Current (V = 0) DS (*) ON Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V = V I = 250 A24V GS(th) DS GS D V = 10 V I = 5 A R Static Drain-source On 0.18 0.20 DS(on) GS D Resistance DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit (*) g Forward Transconductance V = 25 V I =5 A 25 S DS D fs C Input Capacitance V = 25 V f = 1 MHz V = 0 850 pF iss DS GS Output Capacitance 230 pF C oss Reverse Transfer 75 pF C rss Capacitance 2/9